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FM25V02A-DGQTR

Infineon Technologies

FM25V02A-DGQTR by Infineon Technologies

Infineon Technologies' FM25V02A-DGQTR is a 32KX8 FRAM with a memory density of 262144 bit. It operates at a nominal voltage of 3.3V and has an endurance of 10^13 write/erase cycles. This small outline, heat sink package is suitable for applications requiring high-speed and non-volatile data storage.

Median Price

$4.114

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip1Stop

Japan . 6,000 parts In-Stock

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$4.391

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$4.391

Arrow

USA . 3,000 parts In-Stock

1+ parts

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$4.078

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$4.078

Verical

USA . 3,000 parts In-Stock

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$4.114

3,000

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$4.114

Distributors (In-Stock)

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Nova Conductors

Japan . 100 parts In-Stock

1+ parts

$5.770

100+ parts

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100

$5.770

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Vyrian

USA . 4,689 parts In-Stock

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4,689

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Digiode

USA . 485 parts In-Stock

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485

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Advanced Electronics

New Zealand . 78 parts In-Stock

1+ parts

$1.030

100+ parts

$0.979

1k+ parts

$0.978

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-

78

$1.030

$0.979

$0.978

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Ampacity Inc.

Singapore . 4,796 parts In-Stock

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$3.620

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4,796

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Semicontronic

India . 4,510 parts In-Stock

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$3.620

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$3.530

1k+ parts

$3.511

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4,510

$3.620

$3.530

$3.511

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Continental Prestige Electronics

USA . 3,130 parts In-Stock

1+ parts

$5.770

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$5.655

3,130

$5.770

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$5.655

Netroflash

USA . 2,000 parts In-Stock

1+ parts

$5.770

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$5.770

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QUARKTWIN TECHNOLOGY LTD

USA . 25,804 parts In-Stock

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XScomponents

USA . 6,000 parts In-Stock

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Component Stockers USA

USA . 3,770 parts In-Stock

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3,770

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Authorized Procurement Solutions

USA . 2,000 parts In-Stock

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Argo Parts USA

USA . 478 parts In-Stock

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478

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Corphita

USA . 379 parts In-Stock

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379

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Overview

Discover the FM25V02A-DGQTR by Infineon Technologies, a high-quality FRAM that offers exceptional value and benefits. With its advanced technology and reliable manufacturing process, Infineon Technologies sets the standard for excellence in the industry. This versatile product is perfect for a wide range of applications, providing customers with fast and efficient data storage solutions. Experience the advantages of the FM25V02A-DGQTR and unlock the power of reliable and innovative memory technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material for the package body provides durability and protection for the FRAM, making it suitable for various environments.

Surface Mount: YES

This FRAM is surface mountable, allowing for easy installation and integration into circuit boards, saving time and effort during the manufacturing process.

No. of Functions: 1

This FRAM offers a single function, simplifying integration into electronic systems and reducing complexity in design.

Package Shape: RECTANGULAR

The rectangular package shape makes this FRAM compatible with standard board layouts and facilitates efficient space utilization in electronic devices.

Operating Mode: SYNCHRONOUS

The synchronous operation mode ensures reliable and synchronized data read and write operations, enhancing overall system performance and efficiency.

Nominal Supply Voltage / Vsup (V): 3.3

With a nominal supply voltage of 3.3V, this FRAM can operate efficiently within a typical voltage range, making it compatible with a wide range of electronic systems.

No. of Terminals: 8

The FRAM's 8 terminals provide sufficient connectivity options, making it versatile and compatible with different circuit and board layouts.

Package Style (Meter): SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

The small outline, heat sink/slug, and very thin profile package style offer a compact and efficient form factor, allowing for easy integration and space-saving in small electronic devices.

Maximum Operating Temperature: 105 °C

This FRAM has a high maximum operating temperature of 105°C, making it suitable for use in demanding environments or applications where temperature fluctuations may occur.

Organization: 32KX8

The 32KX8 organization of this FRAM provides a large memory capacity, enabling storage and retrieval of a significant amount of data, making it suitable for various data-intensive applications.

Minimum Standby Voltage: 2.7 V

With a minimum standby voltage of 2.7V, this FRAM can maintain data retention even at low power levels, ensuring data integrity and reliability during periods of inactivity.

Minimum Operating Temperature: -40 °C

The FRAM's low minimum operating temperature of -40°C allows it to function reliably even in extreme cold environments, expanding its range of applicability.

Terminal Finish: PURE TIN

The pure tin terminal finish provides excellent electrical conductivity and corrosion resistance, ensuring reliable connectivity and long-term durability of the FRAM.

Terminal Position: DUAL

The dual terminal position offers flexibility in circuit board layout and connection options, enabling efficient integration into various electronic systems.

Write Protection: HARDWARE/SOFTWARE

The write protection feature, available through both hardware and software, ensures secure and controlled data storage, preventing accidental or unauthorized modification.

Maximum Seated Height: 0.8 mm

With a maximum seated height of only 0.8mm, this FRAM offers a low-profile design, making it suitable for applications with space constraints while maintaining performance.

Width: 4 mm

The FRAM's compact width of 4mm allows for efficient space utilization on circuit boards, facilitating integration into small form factor electronic devices.

Minimum Supply Voltage (Vsup): 2.7 V

With a minimum supply voltage of 2.7V, this FRAM can operate reliably at lower power levels, providing energy efficiency and extending battery life.

Maximum Time At Peak Reflow Temperature (s): 30

The FRAM's maximum time at peak reflow temperature of 30 seconds ensures safe and reliable soldering during manufacturing processes, minimizing the risk of damage.

Peak Reflow Temperature °C: 260

This FRAM can withstand the peak reflow temperature of 260°C, meeting industry standards and ensuring solder joints' integrity during manufacturing.

Length: 4.5 mm

The FRAM's compact length of 4.5mm contributes to efficient use of space and seamless integration in various electronic devices and circuits.

Technology: CMOS

Based on CMOS technology, this FRAM offers low power consumption, high integration capabilities, and fast operation speeds, making it suitable for energy-efficient and high-performance applications.

Parallel or Serial: SERIAL

The serial data transfer mode enables efficient and fast communication between the FRAM and other components, optimizing overall system performance.

Terminal Form: NO LEAD

The FRAM's no lead terminal form reduces environmental impact and enables compliance with regulations, making it an eco-friendly and sustainable choice.

Maximum Supply Current: 5 mA

With a maximum supply current of 5mA, this FRAM offers energy efficiency, minimizing power consumption in electronic systems.

No. of Words: 32768 words

The FRAM's large number of words, specifically 32768, enables extensive data storage and retrieval, making it suitable for applications requiring significant memory capacity.

Memory Width: 8

With a memory width of 8 bits, this FRAM offers efficient data storage and retrieval capabilities, ensuring compatibility with various data processing and communication protocols.

Minimum Data Retention Time: 10

The FRAM provides a minimum data retention time of 10 years, ensuring long-term data integrity and reliability, making it suitable for critical applications.

Terminal Pitch: 0.95 mm

The FRAM's terminal pitch of 0.95mm allows for precise alignment during installation and reliable connection with other components, ensuring optimal electrical performance.

No. of Words Code: 32K

The 32K code of the FRAM denotes a large memory capacity, enabling efficient storage and access to a vast amount of data, making it suitable for data-intensive applications.

Moisture Sensitivity Level (MSL): 3

With a moisture sensitivity level of 3, this FRAM can withstand moderate exposure to moisture during manufacturing and handling, minimizing the risk of damage.

Maximum Supply Voltage (Vsup): 3.6 V

With a maximum supply voltage of 3.6V, this FRAM can safely operate within typical voltage ranges, ensuring compatibility with a wide range of electronic systems.

Endurance: 10000000000000 Write/Erase Cycles

With an exceptional endurance of 10000000000000 write/erase cycles, this FRAM offers incredible durability and long-lasting performance, ideal for applications requiring frequent data updates.

Serial Bus Type: SPI

The FRAM's Serial Peripheral Interface (SPI) bus type enables fast and efficient data communication, making it suitable for applications that require rapid data transfer.

Memory Density: 262144 bit

With a memory density of 262,144 bits, this FRAM offers ample storage capacity, allowing for the storage of large amounts of data in a compact form factor.

Maximum Standby Current: 0.0005 Amp

With a maximum standby current of only 0.0005 Amp, this FRAM ensures minimal power consumption when in standby mode, contributing to energy efficiency in electronic systems.

Technical Specifications

FRAMs FM25V02A-DGQTR attributes and parameters. Explore more FRAMs devices from Infineon Technologies

Specs

Additional Features:

2kv ESD available

Minimum Data Retention Time:

10

Endurance:

10000000000000 Write/Erase Cycles

JESD-30 Code:

R-PDSO-N8

Length:

4.5 mm

Memory Density:

262144 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

8

No. of Words:

32768 words

No. of Words Code:

32K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

32KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SOLCC8,.16,37

Package Shape:

Package Style (Meter):

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

260

Maximum Seated Height:

.8 mm

Serial Bus Type:

SPI

Maximum Standby Current:

.0005 Amp

Minimum Standby Voltage:

2.7 V

Maximum Supply Current:

5 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Terminal Finish:

PURE TIN

Terminal Form:

NO LEAD

Terminal Pitch:

.95 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

4 mm

Write Protection:

HARDWARE/SOFTWARE

Trade Compliance

FM25V02A-DGQTR Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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