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DD89N16K-K

Infineon Technologies

DD89N16K-K by Infineon Technologies

Infineon Technologies' DD89N16K-K is a rectifier diode with 1600V peak reverse voltage and 89A output current. Commonly used in applications requiring high power efficiency, such as industrial power supplies and motor drives. Operating temperature range from -40 to 150°C ensures reliable performance in various environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 750 parts In-Stock

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750

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Vyrian

USA . 370 parts In-Stock

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370

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Digiode

USA . 173 parts In-Stock

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173

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Modulus Dynamics

Lithuania . 16,028 parts In-Stock

1+ parts

$0.172

100+ parts

$0.165

1k+ parts

$0.158

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16,028

$0.172

$0.165

$0.158

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Corohmni

South Africa . 94 parts In-Stock

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$0.177

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94

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Advanced Electronics

New Zealand . 350 parts In-Stock

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$0.178

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$0.162

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$0.146

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350

$0.178

$0.162

$0.146

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Ampacity Inc.

Singapore . 1,215 parts In-Stock

1+ parts

$1.010

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1,215

$1.010

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AZTECH Wire

Italy . 493 parts In-Stock

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$17.206

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493

$17.206

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Component Stockers USA

USA . 558 parts In-Stock

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$99.990

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558

$99.990

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Corphita

USA . 879 parts In-Stock

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879

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Perfect Parts

USA . 34 parts In-Stock

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34

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Bastille Electronics

Australia . 10 parts In-Stock

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10

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Overview

Experience unparalleled performance and reliability with the DD89N16K-K by Infineon Technologies. As a trusted leader in diodes and rectifiers, Infineon delivers exceptional quality and precision engineering in every product. The DD89N16K-K offers customers unmatched value and benefits, with its high output current of 89A and maximum reverse voltage of 1600V. Ideal for a wide range of applications, this common cathode diode is perfect for ensuring optimal performance and efficiency in your electronic systems. Trust Infineon to power your innovations with cutting-edge technology.

Feature Benefit Bullets

Config: COMMON CATHODE, 2 ELEMENTS

Common cathode configuration allows for efficient and easy circuit design with two diode elements sharing a common connection, simplifying wiring and reducing complexity.

Maximum Reverse Current: 20000 uA

High maximum reverse current rating ensures reliable performance even under reverse bias conditions, providing a margin of safety for the circuit.

Package Shape: RECTANGULAR

Rectangular package shape allows for easy integration into circuit layouts and ensures compatibility with standard mounting configurations.

Maximum Operating Temperature: 150 °C

High maximum operating temperature rating ensures stability and performance in a wide range of environmental conditions, making this diode suitable for demanding applications.

Maximum Forward Voltage (VF): 1.5 V

Low forward voltage drop of 1.5V ensures minimal power loss and efficient conduction in forward bias, making this diode energy-efficient.

Technical Specifications

Diodes & Rectifiers DD89N16K-K attributes and parameters. Explore more Diodes & Rectifiers devices from Infineon Technologies

Specs

Application:

GENERAL PURPOSE

Case Connection:

ISOLATED

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.5 V

JESD-30 Code:

R-XUFM-X3

Maximum Non Repetitive Peak Forward Current:

2400 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Current:

89 A

Package Body Material:

UNSPECIFIED

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Reference Standard:

UL RECOGNIZED

Maximum Repetitive Peak Reverse Voltage:

1600 V

Maximum Reverse Current:

20000 uA

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Terminal Form:

Terminal Position:

Trade Compliance

DD89N16K-K Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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