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DD171N14K

Infineon Technologies

DD171N14K by Infineon Technologies

Infineon Technologies' DD171N14K is a series connected diode with 2 elements, offering a max output current of 171A and a reverse test voltage of 1400V. Ideal for applications requiring high power rectification, such as industrial power supplies and motor drives. Operating temperature ranges from -40 to 150°C.

Median Price

$108.000

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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Bristol Electronics

USA . 394 parts In-Stock

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$108.000

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$88.560

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394

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$88.560

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Vyrian

USA . 1,572 parts In-Stock

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Digiode

USA . 261 parts In-Stock

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Nova Conductors

Japan . 100 parts In-Stock

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100

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Aztec Data Supply Inc.

USA . 1,093 parts In-Stock

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$0.056

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1,093

$0.056

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Corohmni

South Africa . 168 parts In-Stock

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$0.120

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168

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Modulus Dynamics

Lithuania . 2,246 parts In-Stock

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$0.131

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$0.126

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$0.121

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2,246

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AZTECH Wire

Italy . 759 parts In-Stock

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$18.856

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759

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Continental Prestige Electronics

USA . 4,757 parts In-Stock

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Argo Parts USA

USA . 2,491 parts In-Stock

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Corphita

USA . 512 parts In-Stock

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Aranea Global

USA . 50 parts In-Stock

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Perfect Parts

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Overview

Unlock the power of reliable and efficient technology with the DD171N14K by Infineon Technologies. As a leading manufacturer in the industry, Infineon delivers top-quality diodes and rectifiers that are trusted by professionals worldwide. The DD171N14K features a unique configuration of series connected elements, providing maximum reverse current of 20000 uA and a maximum output current of 171 A. Ideal for a variety of applications, this versatile component offers unparalleled performance, durability, and value to customers seeking cutting-edge solutions. Elevate your projects with the superior capabilities of the DD171N14K from Infineon Technologies.

Feature Benefit Bullets

Config: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

Increases efficiency and reliability by utilizing two diode elements in series connected configuration.

Maximum Reverse Current: 20000 uA

High reverse current capacity provides added protection against potential reverse voltage spikes.

Package Shape: RECTANGULAR

Rectangular package shape allows for easy integration and mounting in various applications.

Maximum Operating Temperature: 150 °C

Can withstand high operating temperatures, making it suitable for demanding environments.

Minimum Operating Temperature: -40 °C

Wide operating temperature range ensures functionality in both extreme cold and hot conditions.

Maximum Output Current: 171 A

Capable of handling high output currents, ideal for power conversion and rectification applications.

Diode Element Material: SILICON

Silicon diode elements offer high efficiency and reliability in rectifier applications.

Technical Specifications

Diodes & Rectifiers DD171N14K attributes and parameters. Explore more Diodes & Rectifiers devices from Infineon Technologies

Specs

Application:

GENERAL PURPOSE

Case Connection:

ISOLATED

Config:

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.26 V

JESD-30 Code:

R-XUFM-X3

Maximum Non Repetitive Peak Forward Current:

5600 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Current:

171 A

Package Body Material:

UNSPECIFIED

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Maximum Repetitive Peak Reverse Voltage:

1400 V

Maximum Reverse Current:

20000 uA

Reverse Test Voltage:

1400 V

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

DD171N14K Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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