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DD1000S33HE3BPSA1

Infineon Technologies

DD1000S33HE3BPSA1 by Infineon Technologies

Infineon's DD1000S33HE3BPSA1 is a 3300V, 1000A rectifier diode with separate elements. Its flange mount package and isolated case connection make it ideal for high-power applications requiring efficient current handling at up to 150°C operating temperature.

Median Price

$1,142.050

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 8 parts In-Stock

1+ parts

$1,061.050

100+ parts

$997.390

1k+ parts

$933.720

10k+ parts

-

8

$1,061.050

$997.390

$933.720

-

Element14

Singapore . 2 parts In-Stock

1+ parts

$1,081.510

100+ parts

-

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-

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2

$1,081.510

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Newark

USA . 3 parts In-Stock

1+ parts

$1,142.050

100+ parts

-

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-

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3

$1,142.050

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DigiKey

USA . 8 parts In-Stock

1+ parts

$1,326.310

100+ parts

-

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-

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8

$1,326.310

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Verical

USA . 8 parts In-Stock

1+ parts

$1,326.313

100+ parts

$1,246.737

1k+ parts

$1,167.150

10k+ parts

-

8

$1,326.313

$1,246.737

$1,167.150

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 989 parts In-Stock

1+ parts

$1,027.434

100+ parts

-

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989

$1,027.434

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Vyrian

USA . 3,105 parts In-Stock

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-

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3,105

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Modulus Dynamics

Lithuania . 32,893 parts In-Stock

1+ parts

$0.015

100+ parts

$0.014

1k+ parts

$0.014

10k+ parts

-

32,893

$0.015

$0.014

$0.014

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Native Components

USA . 446 parts In-Stock

1+ parts

$1.084

100+ parts

-

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-

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446

$1.084

-

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Northwest PG Solutions

USA . 1,227 parts In-Stock

1+ parts

$1.193

100+ parts

-

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1,227

$1.193

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Corphita

USA . 209 parts In-Stock

1+ parts

$973.359

100+ parts

-

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209

$973.359

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Component Stockers USA

USA . 26 parts In-Stock

1+ parts

$1,119.980

100+ parts

-

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26

$1,119.980

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Microchip USA

USA . 4,226 parts In-Stock

1+ parts

$1,183.140

100+ parts

-

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4,226

$1,183.140

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QUARKTWIN TECHNOLOGY LTD

USA . 21,647 parts In-Stock

1+ parts

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21,647

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Perfect Parts

USA . 22 parts In-Stock

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22

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Eastek

USA . 6 parts In-Stock

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6

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Overview

Infineon Technologies presents the DD1000S33HE3BPSA1, a high-quality rectifier diode designed for various applications. With a maximum output current of 1000 A and a maximum repetitive peak reverse voltage of 3300 V, this diode offers unmatched performance and reliability. Whether you're in the automotive, industrial, or renewable energy sector, this product is guaranteed to meet your needs. Trust Infineon Technologies to deliver superior products that provide value, benefits, and advantages to customers worldwide. Upgrade your systems with the DD1000S33HE3BPSA1 and experience the difference today.

Feature Benefit Bullets

Config: SEPARATE, 2 ELEMENTS

Having separate diode elements allows for more precise control and protection against voltage spikes, making this product a reliable choice.

Package Shape: RECTANGULAR

The rectangular shape of the package makes it easy to mount and install in various electronic systems.

No. of Terminals: 7

With 7 terminals, this diode offers flexibility in connecting to different parts of an electrical circuit for optimal performance.

Package Style (Meter): FLANGE MOUNT

The flange mount package style provides stability and easy mounting, ensuring secure placement in electronic systems.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150°C allows this diode to withstand heat and perform reliably in various environments.

Terminal Position: UPPER

The upper terminal position simplifies the connection process and contributes to efficient usage of the diode in electronic circuits.

Case Connection: ISOLATED

The isolated case connection ensures safety and protection against electrical interference, making this diode a secure choice for electronic applications.

Diode Type: RECTIFIER DIODE

Being a rectifier diode, this product is designed to efficiently convert alternating current (AC) to direct current (DC) with minimal voltage drops, enhancing its performance in power supply applications.

Maximum Output Current: 1000 A

With a high maximum output current of 1000 amperes, this diode can handle high-power applications effectively and reliably.

No. of Elements: 2

Having 2 elements provides redundancy and enhances the overall performance and reliability of this diode in electronic circuits.

Maximum Repetitive Peak Reverse Voltage: 3300 V

The high maximum repetitive peak reverse voltage of 3300 volts ensures durability and protection against reverse voltage spikes, making this diode suitable for demanding electronic systems.

Diode Element Material: SILICON

Silicon diode elements offer high efficiency and stability, making this product a durable and reliable choice for various electronic applications.

Technical Specifications

Diodes & Rectifiers DD1000S33HE3BPSA1 attributes and parameters. Explore more Diodes & Rectifiers devices from Infineon Technologies

Specs

Application:

GENERAL PURPOSE

Case Connection:

ISOLATED

Config:

SEPARATE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

JESD-30 Code:

R-XUFM-X7

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

7

Maximum Operating Temperature:

150 Cel

Maximum Output Current:

1000 A

Package Body Material:

UNSPECIFIED

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Repetitive Peak Reverse Voltage:

3300 V

Surface Mount:

NO

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

DD1000S33HE3BPSA1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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