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BSV236SPH6327

Infineon Technologies

BSV236SPH6327 by Infineon Technologies

Infineon BSV236SPH6327 is a P-CHANNEL FET with 20V DS Breakdown Voltage and 1.5A ID. Ideal for automotive applications, it features a built-in diode, 0.175 ohm RDS(on), and AEC-Q101 compliance. The GULL WING terminal form and small outline package make it suitable for compact designs requiring high efficiency.

Median Price

$0.600

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

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Mouser Electronics

USA . 172 parts In-Stock

1+ parts

$0.600

100+ parts

$0.250

1k+ parts

$0.132

10k+ parts

$0.077

172

$0.600

$0.250

$0.132

$0.077

Distributors (In-Stock)

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Digiode

USA . 497 parts In-Stock

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$0.418

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497

$0.418

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Vyrian

USA . 578 parts In-Stock

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$0.440

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578

$0.440

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Semtec, LLC

USA . 8,279 parts In-Stock

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Rutronik

Germany . 6,000 parts In-Stock

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$0.076

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$0.076

ACDS - Activité Composants Distribution Service

France . 2,993 parts In-Stock

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Bristol Electronics

USA . 2,993 parts In-Stock

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Dan-Mar Components

USA . 2,993 parts In-Stock

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Distributors (Availability)

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Corphita

USA . 348 parts In-Stock

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$0.396

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348

$0.396

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Modulus Dynamics

Lithuania . 25,826 parts In-Stock

1+ parts

$1.637

100+ parts

$1.572

1k+ parts

$1.506

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25,826

$1.637

$1.572

$1.506

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Perfect Parts

USA . 20,122 parts In-Stock

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A-Z Elektronik GmbH

Germany . 11,927 parts In-Stock

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GreenTree Electronics

Israel . 6,000 parts In-Stock

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Alle Elektronik GmbH

Germany . 4,951 parts In-Stock

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Glotronic Ltd.

UK . 3,900 parts In-Stock

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Northwest PG Solutions

USA . 1,308 parts In-Stock

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Kepictronics

USA . 500 parts In-Stock

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500

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Native Components

USA . 215 parts In-Stock

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215

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Authorized Procurement Solutions

USA . 100 parts In-Stock

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Overview

Experience superior performance and reliability with the BSV236SPH6327 by Infineon Technologies, a leading manufacturer known for top-quality components. This P-Channel Small Signal Field Effect Transistor (FET) with a built-in diode offers enhanced functionality in a compact package, making it perfect for a wide range of applications. From automotive to consumer electronics, this transistor provides exceptional value, delivering maximum drain current of 1.5A and a low on-resistance of just 0.175 ohm. Trust in the power of Infineon Technologies to elevate your projects to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material provides durability and protection for the internal components of the transistor, ensuring long-term reliability.

Polarity or Channel Type: P-CHANNEL

P-channel transistors are known for their low power consumption and high input impedance, making them suitable for various applications where efficiency is important.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode helps in preventing voltage spikes and reverse current flow, providing additional protection for the circuit.

Surface Mount: YES

Surface mount compatibility allows for easy and efficient installation on circuit boards, saving space and enabling automated assembly processes.

Minimum DS Breakdown Voltage: 20 V

The 20V minimum breakdown voltage ensures reliable performance and protection against overvoltage situations that may occur in the circuit.

Package Shape: RECTANGULAR

The rectangular package shape offers a compact form factor, making it ideal for applications where space is limited.

Transistor Element Material: SILICON

Silicon is a widely used semiconductor material known for its high efficiency, stability, and reliability in electronic devices.

Maximum Drain Current (ID): 1.5 A

The 1.5A maximum drain current capacity allows the transistor to handle higher current loads, making it suitable for power applications.

Maximum Drain-Source On Resistance: 0.175 ohm

The low drain-source on resistance of 0.175 ohm helps in reducing power dissipation and improving efficiency in the circuit.

Reference Standard: AEC-Q101

Compliance with the AEC-Q101 standard ensures that the transistor meets the automotive industry's stringent requirements for reliability and performance.

Technical Specifications

Small Signal Field Effect Transistors (FET) BSV236SPH6327 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Infineon Technologies

Specs

Additional Features:

AVALANCHE RATED

Minimum DS Breakdown Voltage:

20 V

Maximum Drain Current (ID):

1.5 A

Maximum Drain-Source On Resistance:

.175 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G6

No. of Elements:

1

No. of Terminals:

6

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Element Material:

SILICON

Trade Compliance

BSV236SPH6327 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

Category top products 20

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