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BSR315PH6327XTSA1

Infineon Technologies

BSR315PH6327XTSA1 by Infineon Technologies

Infineon's BSR315PH6327XTSA1 is a P-CHANNEL FET with 60V DS Breakdown Voltage, 0.62A ID, and 0.8 ohm RDS(ON). Ideal for automotive applications due to AEC-Q101 standard compliance and built-in diode.

Median Price

$0.307

Lifecycle Status

Suppliers In-Stock

19

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 4,571 parts In-Stock

1+ parts

$0.770

100+ parts

$0.307

1k+ parts

$0.211

10k+ parts

$0.158

4,571

$0.770

$0.307

$0.211

$0.158

Mouser Electronics

USA . 13,446 parts In-Stock

1+ parts

$0.800

100+ parts

$0.318

1k+ parts

$0.218

10k+ parts

$0.163

13,446

$0.800

$0.318

$0.218

$0.163

Chip1Stop

Japan . 16,505 parts In-Stock

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-

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$0.307

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16,505

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$0.307

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Verical

USA . 16,505 parts In-Stock

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$0.310

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$0.222

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$0.177

16,505

-

$0.310

$0.222

$0.177

Rochester

USA . 8,652 parts In-Stock

1+ parts

-

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$0.188

1k+ parts

$0.156

10k+ parts

$0.139

8,652

-

$0.188

$0.156

$0.139

Element14

Singapore . 4,618 parts In-Stock

1+ parts

-

100+ parts

$0.436

1k+ parts

$0.300

10k+ parts

$0.294

4,618

-

$0.436

$0.300

$0.294

Arrow

USA . 3,000 parts In-Stock

1+ parts

-

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$0.143

3,000

-

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$0.143

RS (Exports)

UK . 2,700 parts In-Stock

1+ parts

-

100+ parts

$0.298

1k+ parts

$0.261

10k+ parts

$0.240

2,700

-

$0.298

$0.261

$0.240

Farnell

UK . 1,258 parts In-Stock

1+ parts

-

100+ parts

$0.247

1k+ parts

$0.188

10k+ parts

$0.170

1,258

-

$0.247

$0.188

$0.170

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 432 parts In-Stock

1+ parts

$0.146

100+ parts

-

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432

$0.146

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Nova Conductors

Japan . 900 parts In-Stock

1+ parts

$0.245

100+ parts

-

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900

$0.245

-

-

-

TME

Poland . 62 parts In-Stock

1+ parts

$0.770

100+ parts

$0.322

1k+ parts

$0.202

10k+ parts

$0.160

62

$0.770

$0.322

$0.202

$0.160

Cyclops Electronics Ltd

UK . 42,000 parts In-Stock

1+ parts

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42,000

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NAC Semi

USA . 24,000 parts In-Stock

1+ parts

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$0.505

24,000

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$0.505

Vyrian

USA . 10,802 parts In-Stock

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Kruse Electronics AG

Switzerland . 6,000 parts In-Stock

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Kruse

Germany . 6,000 parts In-Stock

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VNN

France . 3,203 parts In-Stock

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IBS Electronics

USA . 3,000 parts In-Stock

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$0.177

3,000

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$0.177

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 10,509 parts In-Stock

1+ parts

$0.120

100+ parts

-

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10,509

$0.120

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Corphita

USA . 621 parts In-Stock

1+ parts

$0.139

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621

$0.139

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Argo Parts USA

USA . 4,372 parts In-Stock

1+ parts

$0.245

100+ parts

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$0.237

4,372

$0.245

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$0.237

Netroflash

USA . 2,000 parts In-Stock

1+ parts

$0.245

100+ parts

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1k+ parts

$0.232

10k+ parts

$0.228

2,000

$0.245

-

$0.232

$0.228

Component Stockers USA

USA . 57,043 parts In-Stock

1+ parts

$0.260

100+ parts

$0.210

1k+ parts

$0.200

10k+ parts

$0.160

57,043

$0.260

$0.210

$0.200

$0.160

Modulus Dynamics

Lithuania . 8,081 parts In-Stock

1+ parts

$0.368

100+ parts

$0.353

1k+ parts

$0.339

10k+ parts

-

8,081

$0.368

$0.353

$0.339

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Continental Prestige Electronics

USA . 7,422 parts In-Stock

1+ parts

$0.586

100+ parts

$0.318

1k+ parts

$0.194

10k+ parts

$0.166

7,422

$0.586

$0.318

$0.194

$0.166

Epart123

USA . 30,000 parts In-Stock

1+ parts

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$0.310

30,000

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$0.310

Authorized Procurement Solutions

USA . 12,000 parts In-Stock

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Perfect Parts

USA . 491 parts In-Stock

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491

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Overview

Enhance your electronic projects with the BSR315PH6327XTSA1 by Infineon Technologies, a high-quality P-Channel Small Signal Field Effect Transistor with a built-in diode. Designed for reliability and performance, this transistor offers a maximum drain current of 0.62A and a low on-resistance of 0.8 ohm, making it ideal for a variety of applications. Infineon Technologies is a trusted manufacturer known for their innovative solutions, ensuring that you get the best value and benefits from this product. Upgrade your designs with the BSR315PH6327XTSA1 and experience superior results today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides good protection and durability for the transistor, making it suitable for various electronic applications.

Polarity or Channel Type: P-CHANNEL

P-channel transistors are known for their lower on-resistance and better efficiency compared to N-channel transistors, making this product a good choice for power management applications.

Configuration: SINGLE WITH BUILT-IN DIODE

Built-in diode simplifies circuit design and protects against reverse current flow, making it convenient for use in various electronic circuits.

Operating Mode: ENHANCEMENT MODE

Enhancement mode transistors are normally off devices that require a positive voltage at the gate to turn on, providing better control and stability in the circuit.

Maximum Drain Current (ID): 0.62 A

With a maximum drain current of 0.62 A, this transistor can handle moderate power requirements, suitable for low to medium power applications.

Maximum Drain-Source On Resistance: 0.8 ohm

Low drain-source on resistance of 0.8 ohms results in minimal power loss and heat dissipation, ensuring high efficiency in the circuit.

Reference Standard: AEC-Q101

Compliance with AEC-Q101 standard ensures high reliability and quality for automotive applications, making this transistor a reliable choice for automotive electronics.

Technical Specifications

Small Signal Field Effect Transistors (FET) BSR315PH6327XTSA1 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Infineon Technologies

Specs

Additional Features:

AVALANCHE RATED

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (ID):

.62 A

Maximum Drain-Source On Resistance:

.8 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

30 pF

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Transistor Element Material:

SILICON

Trade Compliance

BSR315PH6327XTSA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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