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BFS481-H6327

Infineon Technologies

BFS481-H6327 by Infineon Technologies

Infineon's BFS481-H6327 NPN transistor features hFE of 50, fT of 6000 MHz, and IC of 0.02 A. Ideal for surface mount applications, it operates up to 150°C. Suitable for various electronic functions requiring high-speed switching capabilities.

Median Price

$0.602

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 3,784 parts In-Stock

1+ parts

$0.570

100+ parts

$0.291

1k+ parts

$0.266

10k+ parts

$0.255

3,784

$0.570

$0.291

$0.266

$0.255

Verical

USA . 6,000 parts In-Stock

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$0.634

10k+ parts

$0.599

6,000

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$0.634

$0.599

Distributors (In-Stock)

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Vyrian

USA . 591 parts In-Stock

1+ parts

$0.536

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591

$0.536

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Rutronik

Germany . 3,000 parts In-Stock

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$0.291

3,000

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$0.291

ACDS - Activité Composants Distribution Service

France . 3,000 parts In-Stock

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Bristol Electronics

USA . 3,000 parts In-Stock

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Dan-Mar Components

USA . 3,000 parts In-Stock

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Digiode

USA . 808 parts In-Stock

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808

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Distributors (Availability)

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Native Components

USA . 284 parts In-Stock

1+ parts

$0.553

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284

$0.553

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Northwest PG Solutions

USA . 792 parts In-Stock

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$0.608

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792

$0.608

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CoreStaff

Japan . 6,000 parts In-Stock

1+ parts

$0.888

100+ parts

$0.367

1k+ parts

$0.321

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6,000

$0.888

$0.367

$0.321

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Modulus Dynamics

Lithuania . 804 parts In-Stock

1+ parts

$1.420

100+ parts

$1.363

1k+ parts

$1.306

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804

$1.420

$1.363

$1.306

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Perfect Parts

USA . 121,713 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 26,511 parts In-Stock

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Microchip USA

USA . 6,851 parts In-Stock

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Glotronic Ltd.

UK . 3,900 parts In-Stock

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3,900

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Authorized Procurement Solutions

USA . 1,500 parts In-Stock

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Corphita

USA . 199 parts In-Stock

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Overview

Infineon RF Transistors include Low Noise Amplifiers and High Linearity Transistors. Devices in the Low Noise category are based on silicon bipolar technology. Moderate transition frequency of fT <20 GHz provides ease of use and stability. Breakdown voltage can safely support supply voltage of 5V. These transistors are suitable for use with AM over VHF/UHF up to 14GHz. High Linearity Transistors provide OIP3 (Output 3rd Order Intercept Point) above 29dBm. They are based on Infineon's high volume silicon bipolar and SiGe:C technologies for best in class noise figures. These devices are ideal for drivers, pre-amplifiers, and buffer amplifiers.

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification and switching applications, making this product versatile and suitable for various electronic circuits.

Surface Mount: YES

Surface mount technology allows for compact and easy assembly, making this product suitable for use in small electronic devices where space is limited.

Minimum DC Current Gain (hFE): 50

A minimum DC current gain of 50 ensures efficient signal amplification, making this product ideal for audio amplification and signal processing applications.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this product can withstand high temperature environments, enhancing its reliability and durability.

Maximum Collector Current (IC): 0.02 A

The high maximum collector current of 0.02 amperes allows this transistor to handle higher current loads, making it suitable for power applications.

Terminal Finish: MATTE TIN

The matte tin terminal finish provides good solderability and corrosion resistance, ensuring reliable connections in a variety of operating conditions.

Nominal Transition Frequency (fT): 6000 MHz

With a high nominal transition frequency of 6000 MHz, this transistor is suitable for high frequency applications such as RF amplification and signal processing.

Technical Specifications

Other Function Transistors BFS481-H6327 attributes and parameters. Explore more Other Function Transistors devices from Infineon Technologies

Specs

Maximum Collector Current (IC):

Minimum DC Current Gain (hFE):

50

JESD-609 Code:

e3

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

NPN

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Nominal Transition Frequency (fT):

Trade Compliance

BFS481-H6327 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

Category top products 20

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