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BFN26E6327HTSA1

Infineon Technologies

BFN26E6327HTSA1 by Infineon Technologies

Infineon's BFN26E6327HTSA1 is a NPN BJT transistor with max. collector-emitter voltage of 300V, ideal for switching applications. With a min. DC current gain of 30 and max. operating temp of 150°C, it offers high performance in small outline package style (SOT) for surface mount assembly at up to 0.2A collector current.

Median Price

$0.158

Lifecycle Status

Suppliers In-Stock

17

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 3,005 parts In-Stock

1+ parts

$0.158

100+ parts

-

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3,005

$0.158

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Mouser Electronics

USA . 22,047 parts In-Stock

1+ parts

$0.800

100+ parts

$0.353

1k+ parts

$0.161

10k+ parts

$0.108

22,047

$0.800

$0.353

$0.161

$0.108

Arrow

USA . 30,000 parts In-Stock

1+ parts

-

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10k+ parts

$0.041

30,000

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$0.041

Verical

USA . 24,000 parts In-Stock

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24,000

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Farnell

UK . 3,005 parts In-Stock

1+ parts

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100+ parts

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$0.082

10k+ parts

$0.069

3,005

-

-

$0.082

$0.069

Element14

Singapore . 3,005 parts In-Stock

1+ parts

-

100+ parts

$0.206

1k+ parts

$0.117

10k+ parts

$0.115

3,005

-

$0.206

$0.117

$0.115

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 378 parts In-Stock

1+ parts

$0.133

100+ parts

-

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378

$0.133

-

-

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Maritex

Poland . 4,000 parts In-Stock

1+ parts

$0.285

100+ parts

-

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4,000

$0.285

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Nova Conductors

Japan . 78 parts In-Stock

1+ parts

$0.428

100+ parts

-

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78

$0.428

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Vyrian

USA . 42,887 parts In-Stock

1+ parts

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42,887

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Schukat

Germany . 15,300 parts In-Stock

1+ parts

-

100+ parts

$0.092

1k+ parts

$0.069

10k+ parts

$0.055

15,300

-

$0.092

$0.069

$0.055

NAC Semi

USA . 15,000 parts In-Stock

1+ parts

-

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10k+ parts

$0.376

15,000

-

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$0.376

Chip Stock

USA . 5,500 parts In-Stock

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5,500

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Greenchips

USA . 5,395 parts In-Stock

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5,395

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VNN

France . 4,580 parts In-Stock

1+ parts

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4,580

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TME

Poland . 3,000 parts In-Stock

1+ parts

-

100+ parts

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$0.091

10k+ parts

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3,000

-

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$0.091

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Holdelec - ElecDif-Pro

France . 3,000 parts In-Stock

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3,000

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Semicontronic

India . 42,729 parts In-Stock

1+ parts

$0.036

100+ parts

$0.035

1k+ parts

$0.035

10k+ parts

-

42,729

$0.036

$0.035

$0.035

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Ampacity Inc.

Singapore . 42,665 parts In-Stock

1+ parts

$0.036

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42,665

$0.036

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Corphita

USA . 124 parts In-Stock

1+ parts

$0.126

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124

$0.126

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Aranea Global

USA . 50 parts In-Stock

1+ parts

$0.419

100+ parts

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1k+ parts

$0.403

10k+ parts

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50

$0.419

-

$0.403

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Continental Prestige Electronics

USA . 6,375 parts In-Stock

1+ parts

$0.428

100+ parts

-

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10k+ parts

$0.419

6,375

$0.428

-

-

$0.419

Argo Parts USA

USA . 4,737 parts In-Stock

1+ parts

$0.428

100+ parts

-

1k+ parts

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10k+ parts

$0.415

4,737

$0.428

-

-

$0.415

Corohmni

South Africa . 532 parts In-Stock

1+ parts

$1.062

100+ parts

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532

$1.062

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Modulus Dynamics

Lithuania . 1,497 parts In-Stock

1+ parts

$1.399

100+ parts

$1.343

1k+ parts

$1.287

10k+ parts

-

1,497

$1.399

$1.343

$1.287

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Aztec Data Supply Inc.

USA . 390 parts In-Stock

1+ parts

$1.958

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390

$1.958

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Andel Nordic

Denmark . 753 parts In-Stock

1+ parts

$16.590

100+ parts

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1k+ parts

$11.613

10k+ parts

$11.613

753

$16.590

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$11.613

$11.613

Eastek

USA . 246,000 parts In-Stock

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246,000

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Perfect Parts

USA . 123,908 parts In-Stock

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123,908

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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Overview

Discover the power of Infineon Technologies' BFN26E6327HTSA1 Small Signal Bipolar Junction Transistor. With a focus on quality and reliability, this NPN transistor is perfect for switching applications in various electronic devices. Its high DC current gain and maximum collector-emitter voltage offer unmatched performance, while its surface mount design and small outline package make it easy to integrate into your projects. Trust Infineon Technologies to deliver cutting-edge technology that meets your needs. Elevate your designs with the BFN26E6327HTSA1 today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection to the transistor, making it suitable for a variety of applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, making this transistor versatile in its applications.

Configuration: SINGLE

Simplifies circuit design and implementation, making it easier to integrate into electronic systems.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable performance in such scenarios.

Surface Mount: YES

Enables easy and efficient mounting on PCBs, reducing assembly time and footprint.

Package Shape: RECTANGULAR

Optimizes space utilization on the PCB and facilitates efficient heat dissipation.

Terminal Form: GULL WING

Facilitates automated assembly processes, improving manufacturing efficiency.

No. of Terminals: 3

Simplifies connection and reduces the risk of incorrect wiring.

Package Style (Meter): SMALL OUTLINE

Occupies minimal space on the PCB, enabling compact and lightweight designs.

Minimum DC Current Gain (hFE): 30

Indicates good amplification capabilities, ensuring consistent performance in signal amplification applications.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, suitable for applications where heat dissipation is a concern.

Maximum Collector-Emitter Voltage: 300 V

Offers high voltage tolerance, making it suitable for applications requiring elevated voltage levels.

Transistor Element Material: SILICON

Provides reliability and stability in performance, common in high-quality transistors.

Maximum Collector Current (IC): 0.2 A

Capable of handling moderate current levels, suitable for low to medium power applications.

Terminal Finish: TIN

Provides corrosion resistance and ensures good electrical conductivity for reliable connections.

Terminal Position: DUAL

Enables flexibility in circuit design and layout, accommodating various wiring configurations.

Reference Standard: AEC-Q101

Meets automotive industry standards for quality and reliability, ensuring suitability for automotive applications.

Nominal Transition Frequency (fT): 70 MHz

Indicates the frequency at which the transistor can switch effectively, suitable for high-frequency switching applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BFN26E6327HTSA1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Infineon Technologies

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

300 V

Configuration:

Minimum DC Current Gain (hFE):

30

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BFN26E6327HTSA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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