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BA885

Infineon Technologies

BA885 by Infineon Technologies

PIN DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

Median Price

-

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

LIBRA Elektronik GmbH

Germany . 1,857 parts In-Stock

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1,857

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Vyrian

USA . 795 parts In-Stock

1+ parts

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795

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Digiode

USA . 720 parts In-Stock

1+ parts

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720

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Lighthouse Electronics, Inc.

USA . 70 parts In-Stock

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70

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Resion

USA . 50 parts In-Stock

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50

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Modulus Dynamics

Lithuania . 10,302 parts In-Stock

1+ parts

$0.026

100+ parts

$0.025

1k+ parts

$0.024

10k+ parts

-

10,302

$0.026

$0.025

$0.024

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Native Components

USA . 596 parts In-Stock

1+ parts

$7.052

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596

$7.052

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Assy Fe

Spain . 78,000 parts In-Stock

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78,000

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Kepictronics

USA . 39,000 parts In-Stock

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39,000

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Metaverse IC Inc.

Canada . 33,000 parts In-Stock

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33,000

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Authorized Procurement Solutions

USA . 25,000 parts In-Stock

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25,000

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Glotronic Ltd.

UK . 3,790 parts In-Stock

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3,790

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A-Z Elektronik GmbH

Germany . 2,340 parts In-Stock

1+ parts

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2,340

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Alle Elektronik GmbH

Germany . 1,560 parts In-Stock

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1,560

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Corphita

USA . 673 parts In-Stock

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673

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Northwest PG Solutions

USA . 231 parts In-Stock

1+ parts

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1k+ parts

$6.911

10k+ parts

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231

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$6.911

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Technical Specifications

PIN Diodes BA885 attributes and parameters. Explore more PIN Diodes devices from Infineon Technologies

Specs

Application:

ATTENUATOR; SWITCHING

Minimum Breakdown Voltage:

50 V

Config:

SINGLE

Maximum Diode Capacitance:

.4 pF

Nominal Diode Capacitance:

.25 pF

Diode Element Material:

SILICON

Maximum Diode Forward Resistance:

7 ohm

Diode Resistive Test Current:

1.5 mA

Diode Resistive Test Frequency:

100 MHz

Diode Type:

Frequency Band:

MEDIUM FREQUENCY TO L BAND

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Nominal Minority Carrier Lifetime:

1.6 us

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Sub-Category:

PIN Diodes

Surface Mount:

YES

Technology:

POSITIVE-INTRINSIC-NEGATIVE

Terminal Finish:

Tin (Sn)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

BA885 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

NSN

5961-01-359-1816, 5961013591816

NIIN

013591816

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

Category top products 20

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