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HAF1003(L)

Hitachi

HAF1003(L) by Hitachi

P-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; No. of Terminals: 3;

Median Price

-

Lifecycle Status

Suppliers In-Stock

0

In-Stock Inventory

< 1k

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Northwest PG Solutions

USA . 2,196 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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10k+ parts

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2,196

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-

Native Components

USA . 308 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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10k+ parts

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308

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Technical Specifications

Power Field Effect Transistors (FET) HAF1003(L) attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Hitachi

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

18 A

Maximum Drain Current (ID):

18 A

Maximum Drain-Source On Resistance:

.11 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PSIP-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Trade Compliance

HAF1003(L) Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

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