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3SK288

Hitachi

3SK288 by Hitachi

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Position: DUAL; Maximum Drain Current (ID): .025 A; Package Body Material: PLASTIC/EPOXY;

Median Price

-

Lifecycle Status

Suppliers In-Stock

0

In-Stock Inventory

< 1k

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 931 parts In-Stock

1+ parts

$0.284

100+ parts

-

1k+ parts

-

10k+ parts

$0.273

931

$0.284

-

-

$0.273

Northwest PG Solutions

USA . 2,310 parts In-Stock

1+ parts

$0.313

100+ parts

-

1k+ parts

-

10k+ parts

$0.276

2,310

$0.313

-

-

$0.276

Technical Specifications

RF Small Signal Field Effect Transistors (FET) 3SK288 attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from Hitachi

Specs

Case Connection:

SOURCE

Configuration:

Maximum Drain Current (ID):

.025 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

.03 pF

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JESD-30 Code:

R-PDSO-G4

No. of Elements:

1

No. of Terminals:

4

Operating Mode:

DUAL GATE, DEPLETION MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Minimum Power Gain (Gp):

23 dB

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

3SK288 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

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