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2SK1951

Hitachi

2SK1951 by Hitachi

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 30 W; No. of Terminals: 3; Qualification: Not Qualified;

Median Price

-

Lifecycle Status

Suppliers In-Stock

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In-Stock Inventory

< 1k

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Technical Specifications

Power Field Effect Transistors (FET) 2SK1951 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Hitachi

Specs

Case Connection:

ISOLATED

Configuration:

Maximum Drain Current (Abs) (ID):

25 A

Maximum Drain Current (ID):

25 A

Maximum Drain-Source On Resistance:

.06 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Trade Compliance

2SK1951 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

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