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BCW60A

General Semiconductor

BCW60A by General Semiconductor

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A;

Median Price

$0.044

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

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Rochester

USA . 366 parts In-Stock

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$0.044

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$0.041

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Digiode

USA . 2,863 parts In-Stock

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USA . 68,000 parts In-Stock

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Vyrian

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Mil-Aero Solutions, Inc.

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Anansix

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LIBRA Elektronik GmbH

Germany . 3,207 parts In-Stock

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Connector Distribution Corp

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Right Parts Inc.

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ComSIT Distribution GmbH

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Fibra_Brandt Electronic GMBH

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Corphita

USA . 7,878 parts In-Stock

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Component Stockers USA

USA . 340 parts In-Stock

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Corohmni

South Africa . 424 parts In-Stock

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Native Components

USA . 3,128 parts In-Stock

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Modulus Dynamics

Lithuania . 11,578 parts In-Stock

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IDEA Electronic Components Group

UK . 2,331 parts In-Stock

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MKK Technologies

India . 1,732 parts In-Stock

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DigiPath Technology Company

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Northwest PG Solutions

USA . 7,946 parts In-Stock

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A-Z Elektronik GmbH

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Kulean Microsystems

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Microchip USA

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TANS Electronics

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Glotronic Ltd.

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Metaverse IC Inc.

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Parana Technologies

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Problanco Electronics

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UNI Independent Distributors

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Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BCW60A attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from General Semiconductor

Specs

Additional Features:

LOW NOISE

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

32 V

Configuration:

Minimum DC Current Gain (hFE):

50

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

800 ns

Maximum Turn On Time (ton):

150 ns

Trade Compliance

BCW60A Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

General Semiconductor

Vishay General Semiconductor traces its origins to the founding of the Semiconductor Components Division of General Instrument, in Hicksville, New York in 1960. In 1997, the power semiconductor business of General Instrument became an independent, publicly traded company, General Semiconductor. The same year, General Semiconductor acquired the small signal diode business of ITT Industries. Inc. With the acquisition of General Semiconductor in 2001, Vishay Intertechnology joined the top ranks of discrete semiconductor manufacturers and became a market and technology leader in power rectifiers and TVS avalanche breakdown diodes. Today, Vishay General Semiconductor serves a very wide range of customers with devices that can be used as rectifiers, signal limiters, voltage regulators, switches, signal modulators, signal mixers, signal demodulators, and oscillators. Vishay General Semiconductor customers include leading manufacturers of consumer electronics, lighting, telecommunications equipment, computers, and automotive products.

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