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MRF6VP3450HSR5

Freescale Semiconductor

MRF6VP3450HSR5 by Freescale Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Time At Peak Reflow Temperature (s): 40; Qualification: Not Qualified; Minimum DS Breakdown Voltage: 110 V;

Median Price

$205.656

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USA . 1,193 parts In-Stock

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USA . 3,614 parts In-Stock

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Component Stockers USA

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Continental Prestige Electronics

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Microchip USA

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One Stop Electronics

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QUARKTWIN TECHNOLOGY LTD

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Technical Specifications

RF Power Field Effect Transistors (FET) MRF6VP3450HSR5 attributes and parameters. Explore more RF Power Field Effect Transistors (FET) devices from Freescale Semiconductor

Specs

Case Connection:

SOURCE

Configuration:

Minimum DS Breakdown Voltage:

110 V

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JESD-30 Code:

R-CDFP-F4

No. of Elements:

1

No. of Terminals:

4

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

225 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLATPACK

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

MRF6VP3450HSR5 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

PCN

Manufacturer Highlights

Freescale Semiconductor

On December 7, 2015, NXP completed the merger with Freescale Semiconductor; the merged company continued its operation as NXP Semiconductors N.V.

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