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FQAF8N80

Fairchild Semiconductor

FQAF8N80 by Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 107 W; Maximum Operating Temperature: 150 Cel; Maximum Drain-Source On Resistance: 1.2 ohm;

Median Price

$1.750

Lifecycle Status

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6

In-Stock Inventory

1k+

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Rochester

USA . 557 parts In-Stock

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$1.570

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$1.400

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$1.320

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$1.320

DigiKey

USA . 557 parts In-Stock

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$1.810

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Verical

USA . 221 parts In-Stock

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$1.750

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$1.650

221

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$1.650

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Vyrian

USA . 461 parts In-Stock

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$1.470

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Digiode

USA . 425 parts In-Stock

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$1.653

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DigiKey Marketplace

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Ampacity Inc.

Singapore . 336 parts In-Stock

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$1.250

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Corphita

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$1.566

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Component Stockers USA

USA . 825 parts In-Stock

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$1.760

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$1.660

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Microchip USA

USA . 351 parts In-Stock

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$10.855

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Supply Digital

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Continental Prestige Electronics

USA . 557 parts In-Stock

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$2.100

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Assy Fe

Spain . 47 parts In-Stock

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Technical Specifications

Power Field Effect Transistors (FET) FQAF8N80 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Fairchild Semiconductor

Specs

Avalanche Energy Rating (EAS):

850 mJ

Case Connection:

ISOLATED

Minimum DS Breakdown Voltage:

800 V

Maximum Drain Current (Abs) (ID):

5.9 A

Maximum Drain Current (ID):

5.9 A

Maximum Drain-Source On Resistance:

1.2 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

23.6 A

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

FQAF8N80 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Fairchild Semiconductor

In 2016 Fairchild was acquired by ON Semiconductor (after 2022, onsemi). Fairchild Semiconductor International, Inc. was an American semiconductor company based in San Jose, California. Founded in 1957 as a division of Fairchild Camera and Instrument, it became a pioneer in the manufacturing of transistors and of integrated circuits. Schlumberger bought the firm in 1979 and sold it to National Semiconductor in 1987; Fairchild was spun off as an independent company again in 1997. In September 2016, Fairchild was acquired by ON Semiconductor. The company had locations in the United States at San Jose, California; San Rafael, California; South Portland, Maine; West Jordan, Utah; and Mountaintop, Pennsylvania. Outside the US it operated locations in Australia;[4] Singapore; Bucheon, South Korea; Penang, Malaysia; Suzhou, China; and Cebu, Philippines, among others.

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