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FDP22N50N

Fairchild Semiconductor

FDP22N50N by Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 312.5 W; JESD-609 Code: e3; Maximum Pulsed Drain Current (IDM): 88 A;

Median Price

$3.749

Lifecycle Status

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17

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RS (Exports)

UK . 1 parts In-Stock

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Arrow

USA . 2,265 parts In-Stock

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$3.749

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$2.015

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$1.731

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Chip1Stop

Japan . 56 parts In-Stock

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$4.050

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$1.760

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$1.600

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Element14

Singapore . 784 parts In-Stock

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$4.090

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$2.790

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$2.010

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Mouser Electronics

USA . 1,011 parts In-Stock

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$1.970

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Avnet

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$1.520

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Verical

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$1.925

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$1.813

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Freelance Electronics

USA . 120 parts In-Stock

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$1.088

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$1.142

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$1.077

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$1.088

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Vyrian

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Digiode

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Poland . 86 parts In-Stock

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$4.360

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$2.482

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NAC Semi

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$3.680

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Schukat

Germany . 970 parts In-Stock

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Continental Prestige Electronics

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Corphita

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Microchip USA

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Technical Specifications

Power Field Effect Transistors (FET) FDP22N50N attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Fairchild Semiconductor

Specs

Avalanche Energy Rating (EAS):

1000 mJ

Minimum DS Breakdown Voltage:

500 V

Maximum Drain Current (Abs) (ID):

22 A

Maximum Drain Current (ID):

22 A

Maximum Drain-Source On Resistance:

.22 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

88 A

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

FDP22N50N Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

PCN

Manufacturer Highlights

Fairchild Semiconductor

In 2016 Fairchild was acquired by ON Semiconductor (after 2022, onsemi). Fairchild Semiconductor International, Inc. was an American semiconductor company based in San Jose, California. Founded in 1957 as a division of Fairchild Camera and Instrument, it became a pioneer in the manufacturing of transistors and of integrated circuits. Schlumberger bought the firm in 1979 and sold it to National Semiconductor in 1987; Fairchild was spun off as an independent company again in 1997. In September 2016, Fairchild was acquired by ON Semiconductor. The company had locations in the United States at San Jose, California; San Rafael, California; South Portland, Maine; West Jordan, Utah; and Mountaintop, Pennsylvania. Outside the US it operated locations in Australia;[4] Singapore; Bucheon, South Korea; Penang, Malaysia; Suzhou, China; and Cebu, Philippines, among others.

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