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FDH45N50F_F133

Fairchild Semiconductor

FDH45N50F_F133 by Fairchild Semiconductor

FDH45N50F_F133 by Fairchild Semiconductor is a N-CHANNEL Power FET with 500V DS Breakdown Voltage. It features 180A IDM for SWITCHING applications and has a max power dissipation of 625W. Ideal for high-power switching circuits due to its low on-resistance of 0.12 ohm and high drain current capacity of 45A.

Median Price

$7.445

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Arrow

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$4.111

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$3.212

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Element14

Singapore . 625 parts In-Stock

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$6.868

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$4.338

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$3.929

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$6.868

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Farnell

UK . 625 parts In-Stock

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$7.390

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$4.797

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$4.240

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$7.390

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$4.240

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Mouser Electronics

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$7.500

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$3.650

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$3.610

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$7.500

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Newark

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$5.750

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$4.920

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$7.500

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DigiKey

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$7.520

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$4.344

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$3.158

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Chip1Stop

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$7.920

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$3.990

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$3.500

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$3.340

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$3.340

Verical

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Rochester

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$4.550

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$4.070

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$3.830

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Nova Conductors

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$3.603

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Digiode

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Chip Stock

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Vyrian

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$3.042

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NAC Semi

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$4.120

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Corohmni

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Ampacity Inc.

Singapore . 18,761 parts In-Stock

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$3.470

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Argo Parts USA

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Netroflash

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Continental Prestige Electronics

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Microchip USA

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Overview

Enhance your power switching applications with the FDH45N50F_F133 by Fairchild Semiconductor. Known for their superior quality and reliability, Fairchild Semiconductor offers a wide range of Power Field Effect Transistors that deliver exceptional performance. The FDH45N50F_F133 features a robust N-CHANNEL configuration with a built-in diode, allowing for seamless operation. With a minimum DS Breakdown Voltage of 500V and a maximum Drain Current of 45A, this transistor is designed to handle high-power tasks with ease. Whether you're looking to optimize your industrial machinery or upgrade your electronic devices, the FDH45N50F_F133 provides the value, benefits, and advantages you need to take your projects to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection to the components inside the package.

Polarity or Channel Type: N-CHANNEL

Suitable for various applications due to its channel type.

Configuration: SINGLE WITH BUILT-IN DIODE

Simplified design with built-in diode for efficient operation.

Transistor Application: SWITCHING

Designed specifically for switching applications for optimal performance.

Minimum DS Breakdown Voltage: 500 V

High breakdown voltage for reliable and safe operation.

Operating Mode: ENHANCEMENT MODE

Enhancement mode operation for improved efficiency and control.

Maximum Pulsed Drain Current (IDM): 180 A

High pulsated drain current capability for demanding applications.

Avalanche Energy Rating (EAS): 1868 mJ

High avalanche energy rating for added protection and reliability.

Maximum Power Dissipation (Abs): 625 W

High power dissipation capability for heavy-duty applications.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Utilizes MOSFET technology for efficient and reliable performance.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures without sacrificing performance.

Terminal Finish: MATTE TIN

Matte tin finish for improved solderability and conductivity.

Maximum Drain-Source On Resistance: 0.12 ohm

Low on-resistance for minimal power loss and efficient operation.

Technical Specifications

Power Field Effect Transistors (FET) FDH45N50F_F133 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Fairchild Semiconductor

Specs

Avalanche Energy Rating (EAS):

1868 mJ

Minimum DS Breakdown Voltage:

500 V

Maximum Drain Current (Abs) (ID):

45 A

Maximum Drain Current (ID):

45 A

Maximum Drain-Source On Resistance:

.12 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-247AD

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

180 A

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

FDH45N50F_F133 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

Fairchild Semiconductor

In 2016 Fairchild was acquired by ON Semiconductor (after 2022, onsemi). Fairchild Semiconductor International, Inc. was an American semiconductor company based in San Jose, California. Founded in 1957 as a division of Fairchild Camera and Instrument, it became a pioneer in the manufacturing of transistors and of integrated circuits. Schlumberger bought the firm in 1979 and sold it to National Semiconductor in 1987; Fairchild was spun off as an independent company again in 1997. In September 2016, Fairchild was acquired by ON Semiconductor. The company had locations in the United States at San Jose, California; San Rafael, California; South Portland, Maine; West Jordan, Utah; and Mountaintop, Pennsylvania. Outside the US it operated locations in Australia;[4] Singapore; Bucheon, South Korea; Penang, Malaysia; Suzhou, China; and Cebu, Philippines, among others.

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