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FDC6506P-NB4S006A

Fairchild Semiconductor

FDC6506P-NB4S006A by Fairchild Semiconductor

FDC6506P-NB4S006A by Fairchild Semiconductor is a P-CHANNEL MOSFET with 1.8A max drain current and 0.96W power dissipation. It operates in enhancement mode, suitable for surface mount applications up to 150°C. Ideal for various electronic devices requiring high power efficiency and thermal performance.

Median Price

$0.935

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Adafruit Industries

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60

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Digiode

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Nova Conductors

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Aztec Data Supply Inc.

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Corphita

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Advanced Electronics

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AZTECH Wire

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Overview

Discover the FDC6506P-NB4S006A by Fairchild Semiconductor, a high-quality P-CHANNEL transistor designed for versatile applications. Manufactured with advanced METAL-OXIDE SEMICONDUCTOR technology, this enhancement mode transistor offers a maximum drain current of 1.8 A and a power dissipation of 0.96 W. With its surface mount capability and matte tin finish, this transistor is perfect for various electronic projects. Trust Fairchild Semiconductor for reliable components that deliver exceptional performance and value to meet your needs.

Feature Benefit Bullets

Polarity or Channel Type - P-CHANNEL

P-CHANNEL transistors are known for their lower on-resistance, making them suitable for low power applications and efficient power management.

Surface Mount - YES

Surface mount transistors are compact, easy to install, and versatile for various electronic designs, offering space-saving benefits and enabling high-density PCB layouts.

Operating Mode - ENHANCEMENT MODE

Enhancement mode transistors offer greater control and efficiency in switching applications, allowing for precise manipulation of current flow and enhanced performance.

Maximum Drain Current (Abs) - 1.8 A

With a high maximum drain current capacity, this transistor can handle heavy loads and provide reliable current flow for demanding circuit requirements.

Maximum Power Dissipation (Abs) - 0.96 W

The low power dissipation of this transistor ensures efficient operation and minimizes heat generation, contributing to the overall reliability and longevity of the circuit.

Field Effect Transistor Technology - METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers high gate capacitance, low leakage current, and excellent performance in various applications, providing reliability and stability in operation.

Maximum Operating Temperature - 150 °C

With a high maximum operating temperature, this transistor can withstand elevated temperature environments, ensuring stable performance under challenging conditions.

Terminal Finish - MATTE TIN

Matte tin terminal finish provides good solderability, corrosion resistance, and durability, facilitating easy and reliable assembly in electronic circuits.

Maximum Time At Peak Reflow Temperature (s) - 30

The short time at peak reflow temperature minimizes the risk of thermal damage to the transistor during soldering processes, ensuring component integrity and longevity.

Peak Reflow Temperature °C - 260

With a high peak reflow temperature, this transistor can withstand the heating process during soldering without compromising its functionality, ensuring robust performance in manufacturing environments.

Technical Specifications

Other Function Transistors FDC6506P-NB4S006A attributes and parameters. Explore more Other Function Transistors devices from Fairchild Semiconductor

Specs

Maximum Drain Current (Abs) (ID):

1.8 A

Maximum Drain Current (ID):

1.8 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

FDC6506P-NB4S006A Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Fairchild Semiconductor

In 2016 Fairchild was acquired by ON Semiconductor (after 2022, onsemi). Fairchild Semiconductor International, Inc. was an American semiconductor company based in San Jose, California. Founded in 1957 as a division of Fairchild Camera and Instrument, it became a pioneer in the manufacturing of transistors and of integrated circuits. Schlumberger bought the firm in 1979 and sold it to National Semiconductor in 1987; Fairchild was spun off as an independent company again in 1997. In September 2016, Fairchild was acquired by ON Semiconductor. The company had locations in the United States at San Jose, California; San Rafael, California; South Portland, Maine; West Jordan, Utah; and Mountaintop, Pennsylvania. Outside the US it operated locations in Australia;[4] Singapore; Bucheon, South Korea; Penang, Malaysia; Suzhou, China; and Cebu, Philippines, among others.

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