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FDB016N04AL7

Fairchild Semiconductor

FDB016N04AL7 by Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 283 W; Terminal Position: SINGLE; Operating Mode: ENHANCEMENT MODE;

Median Price

$1.931

Lifecycle Status

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9

In-Stock Inventory

1k+

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Adafruit Industries

USA . 40 parts In-Stock

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$0.942

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$0.857

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$0.772

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40

$0.942

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Flip Electronics (Authorized)

USA . 3,915 parts In-Stock

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DigiKey

USA . 800 parts In-Stock

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$1.931

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800

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Mouser Electronics

USA . 649 parts In-Stock

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$2.790

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649

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Digiode

USA . 2,831 parts In-Stock

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$0.895

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Vyrian

USA . 2,414 parts In-Stock

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Flip Electronics

USA . 3,915 parts In-Stock

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ComSIT Distribution GmbH

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800

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ComSIT USA

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800

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Native Components

USA . 745 parts In-Stock

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$0.496

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$0.496

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Northwest PG Solutions

USA . 661 parts In-Stock

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$0.546

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$0.481

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Corphita

USA . 1,390 parts In-Stock

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$0.848

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Corohmni

South Africa . 283 parts In-Stock

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Advanced Electronics

New Zealand . 40 parts In-Stock

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$0.942

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$0.857

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$0.772

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Component Stockers USA

USA . 846 parts In-Stock

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$4.060

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$2.760

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Microchip USA

USA . 395 parts In-Stock

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$16.665

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RC Electronics

USA . 7,552 parts In-Stock

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$3.070

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$2.800

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$2.720

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A-Z Elektronik GmbH

Germany . 6,198 parts In-Stock

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TANS Electronics

Latvia . 5,439 parts In-Stock

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Problanco Electronics

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Perfect Parts

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Kulean Microsystems

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Supply Digital

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Assy Fe

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GreenTree Electronics

Israel . 690 parts In-Stock

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UHIMA Technologies

Türkiye . 263 parts In-Stock

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Technical Specifications

Power Field Effect Transistors (FET) FDB016N04AL7 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Fairchild Semiconductor

Specs

Additional Features:

ULTRA-LOW RESISTANCE

Avalanche Energy Rating (EAS):

1350 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

40 V

Maximum Drain Current (Abs) (ID):

160 A

Maximum Drain Current (ID):

160 A

Maximum Drain-Source On Resistance:

.0016 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PSSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

6

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

245

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

1224 A

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

FDB016N04AL7 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

Fairchild Semiconductor

In 2016 Fairchild was acquired by ON Semiconductor (after 2022, onsemi). Fairchild Semiconductor International, Inc. was an American semiconductor company based in San Jose, California. Founded in 1957 as a division of Fairchild Camera and Instrument, it became a pioneer in the manufacturing of transistors and of integrated circuits. Schlumberger bought the firm in 1979 and sold it to National Semiconductor in 1987; Fairchild was spun off as an independent company again in 1997. In September 2016, Fairchild was acquired by ON Semiconductor. The company had locations in the United States at San Jose, California; San Rafael, California; South Portland, Maine; West Jordan, Utah; and Mountaintop, Pennsylvania. Outside the US it operated locations in Australia;[4] Singapore; Bucheon, South Korea; Penang, Malaysia; Suzhou, China; and Cebu, Philippines, among others.

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