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ZLPM8010JB20TC

Diodes Incorporated

ZLPM8010JB20TC by Diodes Incorporated

Diodes Inc.'s ZLPM8010JB20TC is a 20-terminal Power Management IC with 12V nominal voltage, suitable for power supply support circuits. It features a square package shape, nickel palladium gold terminal finish, and -20 to 85°C operating temperature range. Ideal for applications requiring compact design and efficient power management.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 4,216 parts In-Stock

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Nova Conductors

Japan . 10 parts In-Stock

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10

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Distributors (Availability)

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Ampacity Inc.

Singapore . 252 parts In-Stock

1+ parts

$1.500

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252

$1.500

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Corohmni

South Africa . 968 parts In-Stock

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$1.914

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968

$1.914

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AZTECH Wire

Italy . 594 parts In-Stock

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$15.070

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594

$15.070

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Component Stockers USA

USA . 548 parts In-Stock

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$99.990

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548

$99.990

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Authorized Procurement Solutions

USA . 25,000 parts In-Stock

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Argo Parts USA

USA . 2,533 parts In-Stock

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2,533

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Continental Prestige Electronics

USA . 1,322 parts In-Stock

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Aranea Global

USA . 1,000 parts In-Stock

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Microchip USA

USA . 450 parts In-Stock

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450

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Overview

Enhance your power management solutions with the ZLPM8010JB20TC by Diodes Incorporated. As a leading manufacturer in the industry, Diodes Incorporated delivers top-quality Power Management ICs that excel in performance and reliability. This surface mount chip carrier offers a wide range of applications and features a very thin profile, making it perfect for various electronic devices. With an adjustable threshold and a nominal supply voltage of 12V, this product provides customers with unmatched value and efficiency. Upgrade your power management systems today with the ZLPM8010JB20TC.

Feature Benefit Bullets

Surface Mount: YES

Allows for easy and secure installation on circuit boards, saving time and effort in assembly process.

Nominal Supply Voltage (Vsup): 12 V

Suitable for applications requiring a consistent voltage supply of 12V, ensuring stable performance.

Maximum Operating Temperature: 85 °C

Can withstand high temperatures, making it suitable for use in various environments without risk of overheating.

Terminal Finish: NICKEL PALLADIUM GOLD

Provides excellent conductivity and corrosion resistance, ensuring reliable connections and longevity of the product.

No. of Channels: 2

Allows for multiple inputs or outputs to be controlled, providing versatility in managing power distribution.

Minimum Supply Voltage (Vsup): 9 V

Can operate at lower voltage levels, making it compatible with a wider range of power sources.

Adjustable Threshold: YES

Provides flexibility in setting voltage thresholds, allowing for customization based on specific requirements.

Technical Specifications

Power Management ICs ZLPM8010JB20TC attributes and parameters. Explore more Power Management ICs devices from Diodes Incorporated

Specs

Adjustable Threshold:

YES

JESD-30 Code:

S-XQCC-N20

JESD-609 Code:

e4

Length:

4 mm

Moisture Sensitivity Level (MSL):

1

No. of Channels:

2

No. of Functions:

1

No. of Terminals:

20

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-20 Cel

Package Body Material:

UNSPECIFIED

Package Code:

Package Equivalence Code:

LCC20,.16SQ,20

Package Shape:

Package Style (Meter):

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Peak Reflow Temperature (C):

260

Maximum Seated Height:

.7 mm

Maximum Supply Voltage (Vsup):

16 V

Minimum Supply Voltage (Vsup):

9 V

Nominal Supply Voltage (Vsup):

12 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

NO LEAD

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Width (mm):

4 mm

Trade Compliance

ZLPM8010JB20TC Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

Category top products 20

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