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T5V0DLP-7B

Diodes Incorporated

T5V0DLP-7B by Diodes Incorporated

T5V0DLP-7B by Diodes Inc. is a transient suppression device with 2 common anode elements, operating b/w -55 to 150°C. It has a max power dissipation of 25W and breakdown voltage of 8V, making it ideal for protecting sensitive electronics from voltage spikes in various applications.

Median Price

$0.230

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 16,100 parts In-Stock

1+ parts

$0.230

100+ parts

$0.076

1k+ parts

$0.044

10k+ parts

$0.043

16,100

$0.230

$0.076

$0.044

$0.043

Newark

USA . 6,200 parts In-Stock

1+ parts

$0.230

100+ parts

$0.076

1k+ parts

$0.044

10k+ parts

-

6,200

$0.230

$0.076

$0.044

-

DigiKey

USA . 9,639 parts In-Stock

1+ parts

$0.250

100+ parts

-

1k+ parts

-

10k+ parts

$0.203

9,639

$0.250

-

-

$0.203

Verical

USA . 110,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.203

110,000

-

-

-

$0.203

Avnet

USA . 40,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

40,000

-

-

-

-

Element14

Singapore . 7,035 parts In-Stock

1+ parts

-

100+ parts

$0.256

1k+ parts

$0.229

10k+ parts

$0.224

7,035

-

$0.256

$0.229

$0.224

Farnell

UK . 6,400 parts In-Stock

1+ parts

-

100+ parts

$0.219

1k+ parts

$0.181

10k+ parts

-

6,400

-

$0.219

$0.181

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

NAC Semi

USA . 30,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

30,000

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Component Stockers USA

USA . 187,114 parts In-Stock

1+ parts

$0.320

100+ parts

$0.100

1k+ parts

$0.060

10k+ parts

$0.040

187,114

$0.320

$0.100

$0.060

$0.040

Kepictronics

USA . 80,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

80,000

-

-

-

-

Eastek

USA . 30,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.034

30,000

-

-

-

$0.034

Authorized Procurement Solutions

USA . 20,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

20,000

-

-

-

-

Continental Prestige Electronics

USA . 8,430 parts In-Stock

1+ parts

-

100+ parts

$0.052

1k+ parts

$0.036

10k+ parts

$0.022

8,430

-

$0.052

$0.036

$0.022

Lixinc

USA . 3,251 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,251

-

-

-

-

Overview

Experience superior transient suppression with the T5V0DLP-7B by Diodes Incorporated, a trusted manufacturer known for top-quality components. As a part of the Transient Suppression Devices category, this product offers unmatched protection against voltage spikes and surges. Its common anode configuration and compact chip carrier package make it ideal for various applications. Ensure your electronics are safeguarded with the T5V0DLP-7B, providing value, reliability, and peace of mind to customers.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material for the package body provides durability and reliability for the product.

Config: COMMON ANODE, 2 ELEMENTS

Common anode configuration with 2 elements allows for effective transient suppression and protection.

Surface Mount: YES

Surface mount capability makes installation and replacement of the device easy and efficient.

Maximum Non Repetitive Peak Reverse Power Dissipation: 25 W

High peak reverse power dissipation ensures effective protection against transient voltage spikes.

Package Shape: RECTANGULAR

Rectangular package shape provides easy integration into circuit designs.

Maximum Operating Temperature: 150 °C

Wide operating temperature range allows for usage in various environmental conditions.

Minimum Operating Temperature: -55 °C

Low minimum operating temperature ensures functionality even in cold environments.

Terminal Finish: NICKEL PALLADIUM GOLD

Nickel palladium gold terminal finish offers good conductivity and corrosion resistance.

Terminal Position: BOTTOM

Bottom terminal position facilitates easy soldering and connection in circuit boards.

Maximum Power Dissipation: 0.385 W

Efficient power dissipation capability ensures long-term reliability of the product.

Minimum Breakdown Voltage: 6.1 V

The minimum breakdown voltage of 6.1 V provides reliable protection against voltage surges.

Maximum Breakdown Voltage: 8 V

High maximum breakdown voltage ensures effective suppression of transient voltages.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

The use of transient voltage suppressor diode offers efficient protection against voltage transients.

Technology: AVALANCHE

Avalanche technology enhances the reliability and performance of the transient suppression device.

No. of Elements: 2

Having 2 elements provides increased protection and redundancy in transient suppression.

Polarity: UNIDIRECTIONAL

Uni-directional polarity ensures proper protection in one direction, suitable for specific applications.

Diode Element Material: SILICON

Silicon diode element material offers high efficiency and reliability for transient suppression.

Technical Specifications

Transient Suppression Devices T5V0DLP-7B attributes and parameters. Explore more Transient Suppression Devices devices from Diodes Incorporated

Specs

Maximum Breakdown Voltage:

8 V

Minimum Breakdown Voltage:

6.1 V

Case Connection:

ANODE

Config:

COMMON ANODE, 2 ELEMENTS

Diode Element Material:

SILICON

JESD-30 Code:

R-PBCC-N3

JESD-609 Code:

e4

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

25 W

No. of Elements:

2

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

CHIP CARRIER

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.385 W

Maximum Repetitive Peak Reverse Voltage:

5 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

T5V0DLP-7B Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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