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SMCJ14A-13

Diodes Incorporated

SMCJ14A-13 by Diodes Incorporated

SMCJ14A-13 by Diodes Inc. is a single TRANS VOLTAGE SUPPRESSOR DIODE with 1500W power dissipation, 16.75V breakdown voltage, and 17.9V max breakdown voltage. It is used for transient suppression in applications requiring protection against voltage spikes in electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,266 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,266

-

-

-

-

Nova Conductors

Japan . 500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

500

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 955 parts In-Stock

1+ parts

$1.010

100+ parts

-

1k+ parts

-

10k+ parts

-

955

$1.010

-

-

-

AZTECH Wire

Italy . 375 parts In-Stock

1+ parts

$17.494

100+ parts

-

1k+ parts

-

10k+ parts

-

375

$17.494

-

-

-

Bastille Electronics

Australia . 10 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

10

-

-

-

-

Overview

Upgrade your electronic devices with the high-quality SMCJ14A-13 by Diodes Incorporated. Designed for transient suppression, this product offers superior performance and reliability. With a focus on customer satisfaction, Diodes Incorporated ensures that their products meet the highest standards. Ideal for a wide range of applications, this device provides excellent protection against voltage spikes and surges. Trust in Diodes Incorporated to deliver value, benefits, and advantages that will enhance your electronic systems.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and resistance to environmental factors, making the product suitable for a wide range of applications.

Maximum Non Repetitive Peak Reverse Power Dissipation: 1500 W

Can handle high power surges effectively, providing reliable protection for connected devices.

Nominal Breakdown Voltage: 16.75 V

Offers precise voltage protection and ensures that the connected equipment is shielded from excessive voltages.

Surface Mount: YES

Allows for easy and efficient installation on circuit boards, saving space and simplifying assembly processes.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Utilizes advanced diode technology specifically designed for transient suppression, providing effective protection against voltage spikes.

Peak Reflow Temperature °C: 260

Can withstand high reflow temperatures during assembly, ensuring reliability and durability in manufacturing processes.

Technical Specifications

Transient Suppression Devices SMCJ14A-13 attributes and parameters. Explore more Transient Suppression Devices devices from Diodes Incorporated

Specs

Maximum Breakdown Voltage:

17.9 V

Minimum Breakdown Voltage:

15.6 V

Nominal Breakdown Voltage:

16.75 V

Maximum Clamping Voltage:

23.2 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

1500 W

No. of Elements:

1

No. of Terminals:

2

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

14 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

SMCJ14A-13 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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