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SMAZ33-13-F

Diodes Incorporated

SMAZ33-13-F by Diodes Incorporated

Diodes Inc. SMAZ33-13-F is a Zener diode with 33V nominal voltage, 1W power dissipation, and 25mA test current. Ideal for applications requiring precise voltage regulation in compact spaces due to its small outline package and low dynamic impedance. Suitable for use in electronics operating within -65 to 150°C temperature range.

Median Price

$0.151

Lifecycle Status

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DigiKey

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$0.220

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$0.104

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$0.096

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115,794

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Mouser Electronics

USA . 332 parts In-Stock

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Newark

USA . 7,019 parts In-Stock

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$0.607

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Verical

USA . 65,000 parts In-Stock

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Avnet

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Farnell

UK . 7,544 parts In-Stock

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Element14

Singapore . 7,544 parts In-Stock

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$0.151

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$0.129

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Arrow

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Nova Conductors

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$0.112

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Forefront Electronics and Design

USA . 10 parts In-Stock

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Vyrian

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Bristol Electronics

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Chip Stock

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NAC Semi

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EPE Components Inc.

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IBS Electronics

USA . 5,000 parts In-Stock

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Classic Components Corporation

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Atlantic Semiconductor

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ComSIT Distribution GmbH

Germany . 2,537 parts In-Stock

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Sea View Technologies

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Prism Electronics

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Semi Source

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Semtec, LLC

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Semicontronic

India . 69,602 parts In-Stock

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Ampacity Inc.

Singapore . 66,706 parts In-Stock

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Corohmni

South Africa . 1,131 parts In-Stock

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Continental Prestige Electronics

USA . 2,655 parts In-Stock

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$0.391

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$0.085

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Perfect Parts

USA . 277,252 parts In-Stock

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Metaverse IC Inc.

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Eastek

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GreenTree Electronics

Israel . 65,000 parts In-Stock

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Kepictronics

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Lixinc

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RC Electronics

USA . 16,200 parts In-Stock

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iBuyXS LLC

. 15,000 parts In-Stock

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Authorized Procurement Solutions

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Netroflash

USA . 2,000 parts In-Stock

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Argo Parts USA

USA . 1,096 parts In-Stock

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Overview

Discover the unmatched quality and reliability of the SMAZ33-13-F Zener Diode by Diodes Incorporated. Designed for precision performance, this small outline diode offers a nominal reference voltage of 33V with a maximum power dissipation of 1W. Ideal for a wide range of applications, this diode provides customers with a cost-effective solution that ensures consistent voltage regulation and protection. Trust in Diodes Incorporated to deliver cutting-edge technology and superior products that exceed expectations. Upgrade your electronic devices with the SMAZ33-13-F and experience the difference today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the zener diode, ensuring a longer lifespan.

Working Test Current: 25 mA

Ideal for applications where a stable current is required.

Maximum Reverse Current: 0.5 uA

Ensures minimal leakage current, enhancing the efficiency of the zener diode.

Surface Mount: YES

Allows for easy and convenient installation on circuit boards.

Maximum Voltage Tolerance: 5 %

Offers precision and reliability in maintaining the desired voltage levels.

Maximum Operating Temperature: 150 °C

Suitable for a wide range of operating conditions without compromising performance.

Maximum Power Dissipation: 1 W

Can handle higher power levels, making it versatile for various applications.

Diode Type: ZENER DIODE

Specifically designed for voltage regulation, making it perfect for voltage reference circuits.

Technical Specifications

Zener Diodes SMAZ33-13-F attributes and parameters. Explore more Zener Diodes devices from Diodes Incorporated

Specs

Additional Features:

HIGH SURGE CAPABILITY

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

15 ohm

Maximum Forward Voltage (VF):

1.2 V

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Maximum Knee Impedance:

300 ohm

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

1 W

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Nominal Reference Voltage:

33 V

Maximum Reverse Current:

.5 uA

Reverse Test Voltage:

25.1 V

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Maximum Voltage Tolerance:

5 %

Working Test Current:

25 mA

Trade Compliance

SMAZ33-13-F Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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