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SBR30A150CTFP

Diodes Incorporated

SBR30A150CTFP by Diodes Incorporated

SBR30A150CTFP by Diodes Inc. is a rectifier diode with max output current of 15A and max repetitive peak reverse voltage of 150V. It has common cathode config, isolated case connection, and matte tin terminal finish. Ideal for super fast soft recovery applications with operating temp range from -65°C to 175°C.

Median Price

$1.343

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 47 parts In-Stock

1+ parts

$2.180

100+ parts

$1.050

1k+ parts

-

10k+ parts

-

47

$2.180

$1.050

-

-

Verical

USA . 7,400 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.506

10k+ parts

-

7,400

-

-

$0.506

-

Avnet

USA . 50 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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50

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Andel Nordic

Denmark . 2,027 parts In-Stock

1+ parts

$6.254

100+ parts

-

1k+ parts

$6.004

10k+ parts

$6.004

2,027

$6.254

-

$6.004

$6.004

Microchip USA

USA . 7,515 parts In-Stock

1+ parts

$7.371

100+ parts

-

1k+ parts

-

10k+ parts

-

7,515

$7.371

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-

-

Lixinc

USA . 8,051 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

8,051

-

-

-

-

Authorized Procurement Solutions

USA . 2,500 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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2,500

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-

-

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Eastek

USA . 50 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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50

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Overview

Looking for a reliable and high-quality rectifier diode for your electronic projects? Look no further than the SBR30A150CTFP by Diodes Incorporated. With a common cathode configuration and super-fast soft recovery, this diode is perfect for applications requiring efficient power management. Its matte tin finish ensures durability while its isolated case connection provides added safety. Trust in the expertise of Diodes Incorporated to deliver top-notch products that meet your needs. Upgrade your electronics with the SBR30A150CTFP and experience the value and benefits it brings to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good protection and insulation for the diodes, ensuring reliability and durability.

Configuration: COMMON CATHODE, 2 ELEMENTS

Common cathode configuration allows for easy integration into circuits, and having 2 elements adds versatility and flexibility.

Package Shape: RECTANGULAR

Rectangular shape allows for efficient mounting and space utilization in electronic circuits.

Maximum Operating Temperature: 175 °C

Can operate at high temperatures without compromising performance, suitable for various applications.

Peak Reflow Temperature: 260°C

Can withstand high peak reflow temperatures, making it suitable for reflow soldering processes.

Diode Type: RECTIFIER DIODE

Rectifier diode type ensures efficient conversion of AC to DC current, essential in many electronic devices.

Maximum Forward Voltage: 0.74 V

Low forward voltage drop leads to minimal power loss and improved energy efficiency.

Maximum Output Current: 15 A

High output current capability allows for handling of large current loads in circuits.

Maximum Repetitive Peak Reverse Voltage: 150 V

Can withstand high reverse voltage spikes, making it suitable for rectification and protection circuits.

Diode Element Material: SILICON

Silicon diode element material ensures stable and reliable performance over a wide range of temperatures and conditions.

Technical Specifications

Diodes & Rectifiers SBR30A150CTFP attributes and parameters. Explore more Diodes & Rectifiers devices from Diodes Incorporated

Specs

Application:

SUPER FAST SOFT RECOVERY

Case Connection:

ISOLATED

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.74 V

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

250 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

15 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

150 V

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SBR30A150CTFP Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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