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SBR300-16JS

Onsemi

SBR300-16JS by Onsemi

SBR300-16JS by Onsemi is a Schottky rectifier diode with a max output current of 30A and max repetitive peak reverse voltage of 160V. It is designed for applications requiring high efficiency and low forward voltage drop, such as power supplies and automotive electronics. The diode's through-hole terminal form and flange mount package style make it easy to integrate into various circuit designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,613 parts In-Stock

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Vyrian

USA . 1,076 parts In-Stock

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TANS Electronics

Latvia . 8,348 parts In-Stock

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SupplyDigital Components

Austria . 7,209 parts In-Stock

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Problanco Electronics

Mexico . 6,270 parts In-Stock

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Kulean Microsystems

USA . 5,186 parts In-Stock

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UHIMA Technologies

Türkiye . 891 parts In-Stock

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Corohmni

South Africa . 436 parts In-Stock

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Corphita

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Overview

Unlock the power of innovation with the SBR300-16JS by Onsemi. Designed with precision and quality in mind, this Schottky rectifier diode offers unparalleled performance in a variety of applications. From industrial to automotive, this product ensures reliability and efficiency, thanks to its advanced technology and maximum output current of 30 A. With Onsemi's reputation for excellence and the SBR300-16JS's value-added benefits, customers can trust in the superior quality and performance that this diode provides. Choose Onsemi for your diode and rectifier needs, and experience the difference in quality and reliability.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material makes the diode durable and resistant to environmental factors, ensuring a longer lifespan.

Config: SINGLE

The single configuration simplifies installation and reduces complexity in wiring, making it easier to use in various applications.

Package Shape: RECTANGULAR

The rectangular shape allows for easy mounting and integration into existing circuit designs, enhancing overall versatility.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this diode can withstand demanding conditions and maintain stable performance.

Diode Type: RECTIFIER DIODE

Being a rectifier diode, it is specifically designed for converting alternating current (AC) to direct current (DC) efficiently, making it ideal for power supply applications.

Maximum Forward Voltage (VF): 0.88 V

The low forward voltage drop of 0.88 V ensures minimal power loss and efficient energy conversion, improving overall device efficiency.

Maximum Output Current: 30 A

With a high maximum output current of 30 A, this diode can handle heavy loads and deliver stable performance under high current conditions.

Technology: SCHOTTKY

The Schottky technology used in this diode results in lower forward voltage drop and faster switching speed, improving overall performance and efficiency.

Maximum Repetitive Peak Reverse Voltage: 160 V

The high repetitive peak reverse voltage rating of 160 V ensures reliable operation and protection against reverse voltage spikes, enhancing overall reliability.

Diode Element Material: SILICON

Silicon is a widely used material in diode manufacturing due to its excellent electrical properties, thermal conductivity, and reliability, ensuring stable and consistent performance.

Technical Specifications

Diodes & Rectifiers SBR300-16JS attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.88 V

Maximum Non Repetitive Peak Forward Current:

140 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Maximum Output Current:

30 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Maximum Repetitive Peak Reverse Voltage:

160 V

Sub-Category:

Rectifier Diodes

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Form:

Terminal Position:

Trade Compliance

SBR300-16JS Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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