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SBR0240LPWQ-7B

Diodes Incorporated

SBR0240LPWQ-7B by Diodes Incorporated

SBR0240LPWQ-7B by Diodes Inc. is a single rectifier diode with fast soft recovery, ideal for applications requiring a max output current of 0.2A and a reverse test voltage of 40V. With a max reverse recovery time of 0.0033us, it operates b/w -55 to 150 °C and has a peak reflow temp of 260C.

Median Price

$0.188

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 5 parts In-Stock

1+ parts

$0.340

100+ parts

$0.131

1k+ parts

$0.086

10k+ parts

$0.059

5

$0.340

$0.131

$0.086

$0.059

Verical

USA . 200,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.035

200,000

-

-

-

$0.035

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IBS Electronics

USA . 70,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

$0.072

70,000

-

-

-

$0.072

NAC Semi

USA . 10,000 parts In-Stock

1+ parts

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10,000

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Nova Conductors

Japan . 76 parts In-Stock

1+ parts

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76

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Distributors (Availability)

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Ampacity Inc.

Singapore . 171,971 parts In-Stock

1+ parts

$0.037

100+ parts

-

1k+ parts

-

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171,971

$0.037

-

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Corohmni

South Africa . 1,142 parts In-Stock

1+ parts

$0.136

100+ parts

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1,142

$0.136

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Eastek

USA . 10,000 parts In-Stock

1+ parts

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10,000

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Argo Parts USA

USA . 1,513 parts In-Stock

1+ parts

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1,513

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Continental Prestige Electronics

USA . 1,374 parts In-Stock

1+ parts

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1,374

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Aranea Global

USA . 100 parts In-Stock

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100

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Overview

Experience superior performance and reliability with the SBR0240LPWQ-7B by Diodes Incorporated. As a leading manufacturer of diodes and rectifiers, Diodes Incorporated delivers top-quality products that are ideal for applications requiring fast soft recovery. With a maximum reverse test voltage of 40V and a low forward voltage of 0.59V, this rectifier diode offers exceptional efficiency and power dissipation. Trust in Diodes Incorporated to provide you with the best-in-class components for your electronic designs. Choose the SBR0240LPWQ-7B for unmatched value, benefits, and advantages in your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diode, making it suitable for various applications.

Maximum Reverse Recovery Time: 0.0033 us

Ensures fast soft recovery, making the diode efficient and responsive in circuit operations.

Maximum Forward Voltage (VF): 0.59 V

Low forward voltage drop results in minimal power loss and efficient energy conversion.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, allowing for reliable performance in demanding environments.

Reference Standard: AEC-Q101; IATF 16949

Compliance with automotive industry standards ensures high quality and reliability for automotive applications.

Technical Specifications

Diodes & Rectifiers SBR0240LPWQ-7B attributes and parameters. Explore more Diodes & Rectifiers devices from Diodes Incorporated

Specs

Additional Features:

FREE WHEELING DIODE

Application:

FAST SOFT RECOVERY

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.59 V

JESD-30 Code:

R-PDSO-N2

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

5 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

.2 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

1 W

Reference Standard:

AEC-Q101; IATF 16949

Maximum Repetitive Peak Reverse Voltage:

40 V

Maximum Reverse Current:

10 uA

Maximum Reverse Recovery Time:

.0033 us

Reverse Test Voltage:

40 V

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

SBR0240LPWQ-7B Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.70

SB

8541.10.00.70

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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