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SBR0220LP-7

Diodes Incorporated

SBR0220LP-7 by Diodes Incorporated

SBR0220LP-7 by Diodes Inc. is a single rectifier diode with a max forward voltage of 0.33V and output current of 0.2A, suitable for applications requiring a peak repetitive reverse voltage of 20V. This chip carrier diode operates in temperatures ranging from -65°C to 150°C, making it ideal for various electronic circuits needing efficient rectification in compact designs.

Median Price

$0.090

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Verical

USA . 15,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.090

15,000

-

-

-

$0.090

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Bristol Electronics

USA . 13,821 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

13,821

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Advanced Electronics

New Zealand . 350 parts In-Stock

1+ parts

$0.129

100+ parts

$0.117

1k+ parts

$0.106

10k+ parts

-

350

$0.129

$0.117

$0.106

-

Component Stockers USA

USA . 51,250 parts In-Stock

1+ parts

$0.400

100+ parts

$0.190

1k+ parts

$0.120

10k+ parts

$0.090

51,250

$0.400

$0.190

$0.120

$0.090

AZTECH Wire

Italy . 48 parts In-Stock

1+ parts

$11.800

100+ parts

-

1k+ parts

-

10k+ parts

-

48

$11.800

-

-

-

Perfect Parts

USA . 26,274 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

26,274

-

-

-

-

Authorized Procurement Solutions

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,000

-

-

-

-

Eastek

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,000

-

-

-

-

Continental Prestige Electronics

USA . 1,800 parts In-Stock

1+ parts

-

100+ parts

$0.192

1k+ parts

$0.109

10k+ parts

$0.083

1,800

-

$0.192

$0.109

$0.083

Lixinc

USA . 329 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

329

-

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-

Overview

Enhance your electronics projects with the SBR0220LP-7 by Diodes Incorporated, a leading manufacturer known for their top-quality components. This chip carrier diode boasts a peak repetitive reverse voltage of 20V and a maximum output current of 0.2A, making it perfect for various applications in the diodes and rectifiers category. With its high-performance capabilities and reliable nickel palladium gold terminal finish, this diode offers exceptional value and benefits to customers seeking superior quality components for their designs. Upgrade your projects with the SBR0220LP-7 and experience the difference today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diode, making it suitable for various environments.

Surface Mount: YES

Allows for easy and convenient installation on circuit boards.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, making it suitable for a wide range of applications.

Diode Type: RECTIFIER DIODE

Designed specifically for rectifying current, ensuring efficient performance.

Maximum Forward Voltage (VF): 0.33 V

Low forward voltage drop minimizes power loss and improves efficiency.

Maximum Output Current: 0.2 A

Can handle moderate current loads, suitable for many electronic devices.

Maximum Repetitive Peak Reverse Voltage: 20 V

Can withstand high reverse voltages, providing protection to the circuit.

Diode Element Material: SILICON

Silicon diodes are known for their reliability and efficiency in electronic circuits.

Technical Specifications

Diodes & Rectifiers SBR0220LP-7 attributes and parameters. Explore more Diodes & Rectifiers devices from Diodes Incorporated

Specs

Additional Features:

FAST SWITCHING

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.33 V

JESD-30 Code:

R-PBCC-N2

JESD-609 Code:

e4

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

5 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

.2 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

CHIP CARRIER

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

20 V

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Position:

Trade Compliance

SBR0220LP-7 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.70

SB

8541.10.00.70

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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