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S2M_HF

Diodes Incorporated

S2M_HF by Diodes Incorporated

S2M_HF by Diodes Inc. is a single rectifier diode with max reverse current of 5uA and max forward voltage of 1.1V. With a package style of small outline, it operates b/w -55 to 150 °C and has a reverse test voltage of 1000V. Ideal for applications requiring high peak reverse voltage and low forward voltage drop in compact designs.

Median Price

$0.266

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 5,000 parts In-Stock

1+ parts

$0.041

100+ parts

-

1k+ parts

-

10k+ parts

$0.029

5,000

$0.041

-

-

$0.029

DigiKey

USA . 18,995 parts In-Stock

1+ parts

$0.360

100+ parts

$0.138

1k+ parts

$0.091

10k+ parts

$0.064

18,995

$0.360

$0.138

$0.091

$0.064

Mouser Electronics

USA . 3,717 parts In-Stock

1+ parts

$0.380

100+ parts

$0.137

1k+ parts

$0.075

10k+ parts

$0.056

3,717

$0.380

$0.137

$0.075

$0.056

Verical

USA . 10,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.171

10,000

-

-

-

$0.171

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

NAC Semi

USA . 10,000 parts In-Stock

1+ parts

$0.100

100+ parts

-

1k+ parts

-

10k+ parts

$0.069

10,000

$0.100

-

-

$0.069

PUI

USA . 10,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

10,000

-

-

-

-

Kruse Electronics AG

Switzerland . 5,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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5,000

-

-

-

-

Kruse

Germany . 5,000 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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5,000

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-

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-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

QUARKTWIN TECHNOLOGY LTD

USA . 25,854 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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25,854

-

-

-

-

Authorized Procurement Solutions

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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3,000

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Overview

Discover the S2M_HF by Diodes Incorporated, a high-quality rectifier diode that offers unmatched reliability and performance. Manufactured with precision and expertise, this diode is perfect for a wide range of applications, from power supplies to automotive electronics. With a maximum reverse voltage of 1000V and a maximum output current of 2A, this diode ensures optimal efficiency and durability. Say goodbye to worries about overheating or electrical failures - the S2M_HF is designed to deliver consistent and stable performance, making it the ideal choice for all your electronic needs. Elevate your projects with the superior quality and value of the S2M_HF diode from Diodes Incorporated.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used for the package body provides durability and protection for the diode, ensuring a longer lifespan.

Config: SINGLE

The single configuration simplifies the design and installation process, making it easier to integrate into various electronic systems.

Surface Mount: YES

Being surface mountable allows for easy and efficient soldering onto circuit boards, saving time and space in the assembly process.

Maximum Reverse Current: 5 uA

The low maximum reverse current helps minimize power losses and enhances efficiency in the operation of the diode.

Package Shape: RECTANGULAR

The rectangular shape of the package allows for space-efficient placement on circuit boards, enabling compact and streamlined electronic designs.

Reverse Test Voltage: 1000 V

The high reverse test voltage ensures reliable operation and protection against reverse voltage spikes, making it suitable for a wide range of applications.

No. of Terminals: 2

Having 2 terminals simplifies the connection process and promotes straightforward integration into electronic circuits.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on circuit boards and facilitates dense packing of components, ideal for compact electronic devices.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this diode can withstand elevated temperatures and is suitable for a variety of environments and applications.

Minimum Operating Temperature: -55 °C

The low minimum operating temperature range ensures reliable performance even in colder conditions, making this diode versatile and resilient.

Terminal Position: DUAL

The dual terminal position offers flexibility in wiring connections and allows for different mounting orientations, enhancing ease of installation.

Diode Type: RECTIFIER DIODE

As a rectifier diode, this product is specifically designed for converting alternating current (AC) to direct current (DC), making it essential for power supply applications.

Maximum Forward Voltage (VF): 1.1 V

The low maximum forward voltage drop ensures minimal power dissipation and efficient energy conversion, enhancing overall performance.

Maximum Output Current: 2 A

With a maximum output current of 2 A, this diode can handle high power loads and is suitable for various electronic circuits and applications.

Terminal Form: C BEND

The C bend terminal form provides secure and reliable electrical connections, preventing accidental disconnection and ensuring consistent performance.

Maximum Repetitive Peak Reverse Voltage: 1000 V

The high maximum repetitive peak reverse voltage rating ensures protection against reverse voltage spikes and overloads, making this diode robust and reliable.

Maximum Non Repetitive Peak Forward Current: 50 A

With a high maximum non-repetitive peak forward current rating, this diode can handle short-term power surges and spikes, offering enhanced durability.

Diode Element Material: SILICON

Being made of silicon, this diode offers excellent performance, reliability, and efficiency, making it a popular choice for a wide range of electronic applications.

Technical Specifications

Diodes & Rectifiers S2M_HF attributes and parameters. Explore more Diodes & Rectifiers devices from Diodes Incorporated

Specs

Application:

GENERAL PURPOSE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.1 V

JEDEC-95 Code:

DO-214AC

JESD-30 Code:

R-PDSO-C2

Maximum Non Repetitive Peak Forward Current:

50 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

2 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Repetitive Peak Reverse Voltage:

1000 V

Maximum Reverse Current:

5 uA

Reverse Test Voltage:

1000 V

Surface Mount:

YES

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

S2M_HF Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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