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RABS20M

Diodes Incorporated

RABS20M by Diodes Incorporated

RABS20M by Diodes Inc. is a bridge rectifier diode with 4 elements, featuring a max output current of 2A and peak repetitive reverse voltage of 1000V. With a fast reverse recovery time of 0.25us, it is ideal for applications requiring efficient AC to DC conversion in small outline packages.

Median Price

$0.077

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 8,253 parts In-Stock

1+ parts

$0.300

100+ parts

$0.167

1k+ parts

$0.110

10k+ parts

$0.071

8,253

$0.300

$0.167

$0.110

$0.071

DigiKey

USA . 17,173 parts In-Stock

1+ parts

$0.780

100+ parts

$0.311

1k+ parts

$0.212

10k+ parts

$0.090

17,173

$0.780

$0.311

$0.212

$0.090

Avnet

USA . 15,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.074

15,000

-

-

-

$0.074

Verical

USA . 12,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.061

12,000

-

-

-

$0.061

Arrow

USA . 5,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.077

5,000

-

-

-

$0.077

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

TME

Poland . 928 parts In-Stock

1+ parts

$0.600

100+ parts

$0.233

1k+ parts

$0.135

10k+ parts

$0.119

928

$0.600

$0.233

$0.135

$0.119

Schukat

Germany . 3,050 parts In-Stock

1+ parts

-

100+ parts

$0.166

1k+ parts

$0.091

10k+ parts

-

3,050

-

$0.166

$0.091

-

NAC Semi

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.103

3,000

-

-

-

$0.103

Nova Conductors

Japan . 48 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

48

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 11,432 parts In-Stock

1+ parts

$0.052

100+ parts

-

1k+ parts

-

10k+ parts

-

11,432

$0.052

-

-

-

Corohmni

South Africa . 594 parts In-Stock

1+ parts

$0.169

100+ parts

-

1k+ parts

-

10k+ parts

-

594

$0.169

-

-

-

Component Stockers USA

USA . 16,543 parts In-Stock

1+ parts

$0.390

100+ parts

$0.120

1k+ parts

$0.100

10k+ parts

$0.060

16,543

$0.390

$0.120

$0.100

$0.060

Eastek

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,000

-

-

-

-

Argo Parts USA

USA . 2,734 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,734

-

-

-

-

Continental Prestige Electronics

USA . 1,990 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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1,990

-

-

-

-

Aranea Global

USA . 1,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,000

-

-

-

-

Authorized Procurement Solutions

USA . 1,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,000

-

-

-

-

Overview

Discover the RABS20M by Diodes Incorporated, a high-quality bridge rectifier diode that delivers superior performance and reliability. With a robust construction and advanced technology, this product is perfect for a wide range of applications. Whether you're in the automotive industry or working on industrial equipment, the RABS20M offers unparalleled value and benefits. Trust Diodes Incorporated, a trusted manufacturer known for their innovation and expertise, to provide you with the best in semiconductor solutions. Upgrade your projects with the RABS20M and experience the difference today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy package body material provides good insulation and protection for the diodes, increasing durability and reliability.

Maximum Reverse Recovery Time: 0.25 us

Very fast reverse recovery time ensures efficient operation and minimal power loss in the circuit.

Maximum Reverse Current: 1 uA

Low reverse current ensures minimal leakage current and efficient performance of the diodes.

Package Shape: RECTANGULAR

Rectangular package shape allows for easy mounting and installation in various electronic devices.

Reverse Test Voltage: 1000 V

High reverse test voltage of 1000V allows for use in high voltage applications without the risk of breakdown.

Maximum Operating Temperature: 150 °C

High maximum operating temperature of 150°C ensures stable performance even in demanding conditions.

Terminal Finish: MATTE TIN

Matte tin terminal finish provides good conductivity and solderability, ensuring secure connections.

Maximum Output Current: 2 A

High maximum output current of 2A allows for use in a variety of applications requiring higher current handling capabilities.

Diode Element Material: SILICON

Silicon diode element material offers good reliability and efficiency in converting alternating current to direct current.

Technical Specifications

Bridge Rectifier Diodes RABS20M attributes and parameters. Explore more Bridge Rectifier Diodes devices from Diodes Incorporated

Specs

Minimum Breakdown Voltage:

1000 V

Config:

BRIDGE, 4 ELEMENTS

Diode Element Material:

SILICON

Maximum Forward Voltage (VF):

1.3 V

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

60 A

No. of Elements:

4

No. of Phases:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

2 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Repetitive Peak Reverse Voltage:

1000 V

Maximum Reverse Current:

1 uA

Maximum Reverse Recovery Time:

.25 us

Reverse Test Voltage:

1000 V

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

RABS20M Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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