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PAM8012AZN

Diodes Incorporated

PAM8012AZN by Diodes Incorporated

PAM8012AZN by Diodes Inc. is a Class D audio amplifier with 5V power supply, operating from -40 to 85°C. It features a grid array package style with 9 terminals and matte tin finish, suitable for industrial applications requiring high-quality audio amplification in compact electronic devices.

Median Price

$0.502

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 1,760 parts In-Stock

1+ parts

$0.420

100+ parts

$0.228

1k+ parts

$0.193

10k+ parts

-

1,760

$0.420

$0.228

$0.193

-

Farnell

UK . 1,877 parts In-Stock

1+ parts

$0.583

100+ parts

$0.327

1k+ parts

$0.225

10k+ parts

$0.188

1,877

$0.583

$0.327

$0.225

$0.188

Mouser Electronics

USA . 5,302 parts In-Stock

1+ parts

$0.770

100+ parts

$0.279

1k+ parts

$0.223

10k+ parts

$0.166

5,302

$0.770

$0.279

$0.223

$0.166

DigiKey

USA . 4,168 parts In-Stock

1+ parts

$0.910

100+ parts

$0.349

1k+ parts

$0.236

10k+ parts

$0.176

4,168

$0.910

$0.349

$0.236

$0.176

Verical

USA . 21,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.158

21,000

-

-

-

$0.158

Element14

Singapore . 1,877 parts In-Stock

1+ parts

-

100+ parts

$0.249

1k+ parts

$0.215

10k+ parts

-

1,877

-

$0.249

$0.215

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Continental Prestige Electronics

USA . 5,410 parts In-Stock

1+ parts

$0.295

100+ parts

$0.204

1k+ parts

$0.118

10k+ parts

$0.108

5,410

$0.295

$0.204

$0.118

$0.108

Kepictronics

USA . 11,745 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

11,745

-

-

-

-

Overview

Unlock the power of crystal-clear audio with the PAM8012AZN from Diodes Incorporated. As a leading manufacturer in the industry, Diodes Incorporated delivers top-notch quality and reliability in their products. The PAM8012AZN falls under the Audio & Video Amplifiers category, offering high-performance Class D audio amplification for a wide range of applications. Experience the unparalleled value and benefits of this product, with its compact design, efficient power supply, and industrial-grade temperature range. Elevate your audio experience with the PAM8012AZN, the perfect choice for all your amplifier needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material is durable and lightweight, making the amplifier easy to handle and install.

Surface Mount: YES

Surface mount capability allows for easy integration into circuit boards, saving space and simplifying manufacturing processes.

General IC Type: CLASS D AUDIO AMPLIFIER

Class D audio amplifiers are known for their high efficiency and low heat generation, making them ideal for powering audio systems efficiently.

Power Supplies (V): 5

Operating at 5V allows for flexibility in power source options and compatibility with various devices.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature, this amplifier can withstand demanding conditions without performance degradation.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature ensures reliable performance even in extreme cold environments.

Terminal Finish: MATTE TIN

Matte tin finish provides good conductivity and solderability, ensuring reliable connections for optimal performance.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making this amplifier energy-efficient and reliable.

Technical Specifications

Audio & Video Amplifiers PAM8012AZN attributes and parameters. Explore more Audio & Video Amplifiers devices from Diodes Incorporated

Specs

General IC Type:

JESD-30 Code:

S-PBGA-B9

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

3

No. of Terminals:

9

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA9,3X3,16

Package Shape:

Package Style (Meter):

GRID ARRAY, FINE PITCH

Peak Reflow Temperature (C):

260

Power Supplies (V):

5

Qualification:

Not Qualified

Sub-Category:

Audio/Video Amplifiers

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Pitch:

.4 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

PAM8012AZN General Purpose ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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