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P6SMAJ51ADF-13

Diodes Incorporated

P6SMAJ51ADF-13 by Diodes Incorporated

P6SMAJ51ADF-13 by Diodes Inc. is a unidirectional Trans Voltage Suppressor Diode with 51V VRWM, 600W Pd, and -55 to 150°C operating temp. It's used for transient suppression in electronic circuits, offering protection against voltage spikes. Ideal for SMT applications due to its small outline package style.

Median Price

$0.125

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Verical

USA . 30,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.125

30,000

-

-

-

$0.125

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 150 parts In-Stock

1+ parts

$0.184

100+ parts

-

1k+ parts

-

10k+ parts

-

150

$0.184

-

-

-

Vyrian

USA . 2,379 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

-

2,379

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-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 225 parts In-Stock

1+ parts

$0.070

100+ parts

-

1k+ parts

-

10k+ parts

-

225

$0.070

-

-

-

Ampacity Inc.

Singapore . 29,759 parts In-Stock

1+ parts

$0.095

100+ parts

-

1k+ parts

-

10k+ parts

-

29,759

$0.095

-

-

-

Semicontronic

India . 29,605 parts In-Stock

1+ parts

$0.095

100+ parts

$0.093

1k+ parts

$0.092

10k+ parts

-

29,605

$0.095

$0.093

$0.092

-

Continental Prestige Electronics

USA . 6,299 parts In-Stock

1+ parts

$0.184

100+ parts

-

1k+ parts

-

10k+ parts

$0.181

6,299

$0.184

-

-

$0.181

Argo Parts USA

USA . 1,638 parts In-Stock

1+ parts

$0.184

100+ parts

-

1k+ parts

-

10k+ parts

$0.179

1,638

$0.184

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-

$0.179

Netroflash

USA . 50 parts In-Stock

1+ parts

$0.184

100+ parts

$0.181

1k+ parts

-

10k+ parts

-

50

$0.184

$0.181

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-

Corohmni

South Africa . 525 parts In-Stock

1+ parts

$0.210

100+ parts

-

1k+ parts

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10k+ parts

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525

$0.210

-

-

-

AZTECH Wire

Italy . 937 parts In-Stock

1+ parts

$19.840

100+ parts

-

1k+ parts

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10k+ parts

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937

$19.840

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Component Stockers USA

USA . 12,850 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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12,850

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Overview

Discover the ultimate protection with the P6SMAJ51ADF-13 by Diodes Incorporated. As a leading manufacturer in transient suppression devices, Diodes Incorporated offers top-quality products that guarantee reliability and durability. Ideal for a wide range of applications, this single-configured diode provides maximum power dissipation of 600W and a minimum breakdown voltage of 56.7V. With its compact package style and high-tech technology, customers can trust in the value and benefits that this product brings, ensuring peace of mind and superior performance in any situation.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the package durable and reliable for long-term use.

Maximum Non Repetitive Peak Reverse Power Dissipation: 600 W

With a high peak reverse power dissipation of 600W, this device can handle sudden spikes in voltage effectively, protecting the connected circuitry.

Maximum Operating Temperature: 150 °C

The high operating temperature range allows this device to function effectively in a variety of environments without any performance issues.

Terminal Finish: MATTE TIN

The matte tin finish provides good conductivity and corrosion resistance, ensuring optimal performance over time.

Technology: AVALANCHE

The avalanche technology used in this device allows for quick and efficient response to voltage surges, providing reliable protection for connected components.

Maximum Repetitive Peak Reverse Voltage: 51 V

The high repetitive peak reverse voltage rating of 51V ensures that this device can handle multiple voltage spikes without failing, making it a reliable choice for transient suppression.

Technical Specifications

Transient Suppression Devices P6SMAJ51ADF-13 attributes and parameters. Explore more Transient Suppression Devices devices from Diodes Incorporated

Specs

Additional Features:

EXCELLENT CLAMPING CAPABILITY

Maximum Breakdown Voltage:

65.2 V

Minimum Breakdown Voltage:

56.7 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-F2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

600 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

1.5 W

Maximum Repetitive Peak Reverse Voltage:

51 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

P6SMAJ51ADF-13 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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