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P6SMAJ22ADF-13

Diodes Incorporated

P6SMAJ22ADF-13 by Diodes Incorporated

P6SMAJ22ADF-13 by Diodes Inc. is a 600W TRANS VOLTAGE SUPPRESSOR DIODE with 22V VRWM, suitable for transient suppression applications. It operates b/w -55 to 150°C, in a SMALL OUTLINE package with DUAL terminals and UNIDIRECTIONAL polarity. The device features AVALANCHE technology and has a max power dissipation of 1.5W.

Median Price

$0.125

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Avnet

USA . 10,000 parts In-Stock

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Verical

USA . 10,000 parts In-Stock

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$0.125

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$0.125

Distributors (In-Stock)

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Nova Conductors

Japan . 50 parts In-Stock

1+ parts

$0.186

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50

$0.186

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NAC Semi

USA . 10,000 parts In-Stock

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Vyrian

USA . 5,137 parts In-Stock

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5,137

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Distributors (Availability)

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Ampacity Inc.

Singapore . 9,527 parts In-Stock

1+ parts

$0.010

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-

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9,527

$0.010

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Aztec Data Supply Inc.

USA . 170 parts In-Stock

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$0.100

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170

$0.100

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Corohmni

South Africa . 151 parts In-Stock

1+ parts

$0.160

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151

$0.160

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Netroflash

USA . 100 parts In-Stock

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$0.186

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$0.177

10k+ parts

$0.173

100

$0.186

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$0.173

Component Stockers USA

USA . 61,160 parts In-Stock

1+ parts

$1.640

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61,160

$1.640

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Semicontronic

India . 9,670 parts In-Stock

1+ parts

$2.010

100+ parts

$1.960

1k+ parts

$1.950

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9,670

$2.010

$1.960

$1.950

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AZTECH Wire

Italy . 346 parts In-Stock

1+ parts

$22.020

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346

$22.020

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Continental Prestige Electronics

USA . 5,088 parts In-Stock

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Argo Parts USA

USA . 1,449 parts In-Stock

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Overview

Enhance your electronic systems with the P6SMAJ22ADF-13 by Diodes Incorporated, a leading manufacturer of top-quality Transient Suppression Devices. This single-configured, surface mount diode offers reliable protection against power surges and voltage spikes, ensuring optimal performance and longevity for your devices. With a maximum non-repetitive peak reverse power dissipation of 600W and a compact rectangular package shape, this diode is ideal for a wide range of applications. Trust in Diodes Incorporated to deliver exceptional products that provide value, benefits, and advantages to customers looking for superior transient suppression solutions.

Feature Benefit Bullets

Package Body Material:

PLASTIC/EPOXY - Provides durability and resistance to external elements, making this product suitable for various environments.

Config:

SINGLE - Simplifies installation and maintenance, ensuring ease of use for the end user.

Surface Mount:

YES - Allows for easy integration into circuit boards, saving space and reducing assembly time.

Maximum Non Repetitive Peak Reverse Power Dissipation:

600 W - Offers high power dissipation capabilities, protecting the circuit from sudden voltage spikes.

Package Shape:

RECTANGULAR - Facilitates efficient placement on circuit boards, optimizing space utilization.

No. of Terminals:

2 - Streamlines the connection process, reducing the chances of errors during installation.

Package Style (Meter):

SMALL OUTLINE - Enables a compact design, ideal for applications with limited space availability.

Maximum Operating Temperature:

150 °C - Ensures stable performance even in high-temperature environments, enhancing reliability.

Minimum Operating Temperature:

55 °C - Allows the product to function effectively in cold conditions, expanding its versatility.

Terminal Finish:

MATTE TIN - Provides a reliable contact surface, ensuring consistent performance over time.

Terminal Position:

DUAL - Enhances stability and conductivity, leading to efficient current flow within the system.

Maximum Power Dissipation:

1.5 W - Offers sufficient power handling capacity to protect sensitive components in the circuit.

Minimum Breakdown Voltage:

24.4 V - Provides effective voltage clamping, safeguarding the circuit against overvoltage conditions.

Maximum Time At Peak Reflow Temperature (s):

30 - Allows for safe soldering processes, preventing damage to the component.

Peak Reflow Temperature °C:

260 - Supports high-temperature manufacturing processes, ensuring product durability.

Maximum Breakdown Voltage:

28 V - Provides a suitable safety margin for voltage protection, enhancing the product's reliability.

Diode Type:

TRANS VOLTAGE SUPPRESSOR DIODE - Offers efficient voltage regulation, safeguarding the circuit from power surges.

Technology:

AVALANCHE - Delivers reliable overvoltage protection, ensuring the safety of connected devices.

Terminal Form:

FLAT - Enables secure connections, reducing the risk of signal loss or short circuits.

Maximum Repetitive Peak Reverse Voltage:

22 V - Ensures consistent reverse voltage tolerance, protecting the circuit from recurrent voltage spikes.

Polarity:

UNIDIRECTIONAL - Provides reliable voltage clamping in one direction, enhancing the product's efficiency.

Diode Element Material:

SILICON - Offers superior performance and durability, ensuring a long service life for the product.

Technical Specifications

Transient Suppression Devices P6SMAJ22ADF-13 attributes and parameters. Explore more Transient Suppression Devices devices from Diodes Incorporated

Specs

Additional Features:

EXCELLENT CLAMPING CAPABILITY

Maximum Breakdown Voltage:

28 V

Minimum Breakdown Voltage:

24.4 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-F2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

600 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

1.5 W

Maximum Repetitive Peak Reverse Voltage:

22 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

P6SMAJ22ADF-13 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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