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MMBD5004BRM-7

Diodes Incorporated

MMBD5004BRM-7 by Diodes Incorporated

MMBD5004BRM-7 by Diodes Inc. is a rectifier diode with 2 elements, 400V breakdown voltage, and 0.05us reverse recovery time. It is ideal for high voltage fast recovery applications, operates b/w -65 to 150 °C, and has a max power dissipation of 0.35W.

Median Price

$0.348

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 100 parts In-Stock

1+ parts

$0.348

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100

$0.348

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Chip Stock

USA . 11,500 parts In-Stock

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11,500

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Vyrian

USA . 11,379 parts In-Stock

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11,379

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Argo Parts USA

USA . 3,496 parts In-Stock

1+ parts

$0.348

100+ parts

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$0.338

3,496

$0.348

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$0.338

Continental Prestige Electronics

USA . 1,718 parts In-Stock

1+ parts

$0.348

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$0.341

1,718

$0.348

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$0.341

Ampacity Inc.

Singapore . 695 parts In-Stock

1+ parts

$3.010

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695

$3.010

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AZTECH Wire

Italy . 358 parts In-Stock

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$15.573

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358

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Kepictronics

USA . 38,000 parts In-Stock

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38,000

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Lixinc

USA . 15,636 parts In-Stock

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Perfect Parts

USA . 4,479 parts In-Stock

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4,479

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Authorized Procurement Solutions

USA . 2,000 parts In-Stock

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Overview

Discover the power of the MMBD5004BRM-7 by Diodes Incorporated, a high-quality rectifier diode designed to deliver fast recovery and reliable performance in high voltage applications. With a maximum reverse test voltage of 240V and a minimum breakdown voltage of 400V, this small outline package offers customers peace of mind knowing they are investing in a top-notch product from a trusted manufacturer. Whether you're working on electronics, power supplies, or industrial equipment, the MMBD5004BRM-7 provides the value, benefits, and advantages you need to bring your projects to life with confidence and efficiency.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the diodes, making them suitable for a variety of applications.

Config: 2 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

This configuration allows for efficient operation and reliable performance in high voltage fast recovery applications.

Surface Mount: YES

The surface mount feature ensures easy installation and compact design, making it ideal for space-constrained projects.

Maximum Reverse Recovery Time: 0.05 us

With a fast reverse recovery time, this diode ensures quick and efficient switching, enhancing overall system performance.

Maximum Reverse Current: 100 uA

Low reverse current minimizes power loss and improves efficiency in high voltage applications.

Package Shape: RECTANGULAR

The rectangular shape allows for easy integration into circuit designs and ensures a standardized fit in various applications.

Reverse Test Voltage: 240 V

The high reverse test voltage rating provides reliable reverse blocking capability, ensuring the diode can handle high voltage conditions.

No. of Terminals: 6

The six terminals allow for versatile connectivity options and support complex circuit configurations.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on PCBs and enables high-density mounting for enhanced design flexibility.

Application: HIGH VOLTAGE FAST RECOVERY

Designed for high voltage fast recovery applications, this diode offers superior performance and reliability in demanding environments.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this diode can withstand harsh environmental conditions without compromising performance.

Minimum Operating Temperature: -65 °C

The wide operating temperature range ensures reliable operation in both low and high temperature environments.

Terminal Finish: MATTE TIN

The matte tin finish provides corrosion resistance and solderability for secure electrical connections.

Terminal Position: DUAL

Dual terminal positions offer flexibility in PCB layout and facilitate efficient circuit designs.

Maximum Power Dissipation: 0.35 W

The high power dissipation rating allows the diode to handle significant power loads without overheating.

Minimum Breakdown Voltage: 400 V

The high minimum breakdown voltage ensures reliable performance and protection against voltage surges.

Maximum Time At Peak Reflow Temperature (s): 30

The diode can withstand peak reflow temperatures for up to 30 seconds, making it suitable for soldering processes.

Peak Reflow Temperature °C: 260

The peak reflow temperature rating ensures that the diode remains stable and reliable during soldering operations.

Diode Type: RECTIFIER DIODE

This rectifier diode type is suitable for converting AC to DC power and has low forward voltage drop for efficient energy conversion.

Maximum Forward Voltage (VF): 1.29 V

The low maximum forward voltage drop ensures minimal power loss and efficient energy conversion in rectification applications.

Maximum Output Current: 0.225 A

With a high maximum output current, this diode can handle significant loads and deliver consistent performance.

Terminal Form: GULL WING

The gull wing terminal form allows for easy surface mounting and secure solder joints, ensuring reliable electrical connections.

No. of Elements: 4

The four elements provide redundancy and stability for enhanced reliability in critical applications.

Maximum Repetitive Peak Reverse Voltage: 400 V

The high maximum repetitive peak reverse voltage rating ensures reliable performance and protection against voltage spikes.

Maximum Non Repetitive Peak Forward Current: 1 A

With a high maximum non-repetitive peak forward current, this diode can handle short-duration high current pulses without damage.

Diode Element Material: SILICON

The silicon material of the diode elements ensures high efficiency and fast response times for improved performance.

Technical Specifications

Diodes & Rectifiers MMBD5004BRM-7 attributes and parameters. Explore more Diodes & Rectifiers devices from Diodes Incorporated

Specs

Application:

HIGH VOLTAGE FAST RECOVERY

Minimum Breakdown Voltage:

400 V

Config:

2 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.29 V

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

1 A

No. of Elements:

4

No. of Phases:

1

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

.225 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

.35 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

400 V

Maximum Reverse Current:

100 uA

Maximum Reverse Recovery Time:

.05 us

Reverse Test Voltage:

240 V

Sub-Category:

Signal Diodes

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MMBD5004BRM-7 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.70

SB

8541.10.00.70

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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