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MMBD3004S-13-F

Diodes Incorporated

MMBD3004S-13-F by Diodes Incorporated

MMBD3004S-13-F by Diodes Inc. is a single rectifier diode with a max reverse recovery time of 0.05 us and forward voltage of 0.87 V. It operates b/w -65 to 150 °C, suitable for surface mount applications in electronics requiring high-speed switching capabilities.

Median Price

$0.064

Lifecycle Status

EOL

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 693 parts In-Stock

1+ parts

-

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$0.036

693

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$0.036

Arrow

USA . 370 parts In-Stock

1+ parts

-

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$0.064

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370

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-

$0.064

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Verical

USA . 370 parts In-Stock

1+ parts

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$0.064

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370

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$0.064

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

ComSIT Distribution GmbH

Germany . 14,685 parts In-Stock

1+ parts

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14,685

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Vyrian

USA . 9,634 parts In-Stock

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9,634

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Nova Conductors

Japan . 100 parts In-Stock

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100

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 60,654 parts In-Stock

1+ parts

$0.021

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-

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60,654

$0.021

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Advanced Electronics

New Zealand . 270 parts In-Stock

1+ parts

$0.116

100+ parts

$0.106

1k+ parts

$0.095

10k+ parts

-

270

$0.116

$0.106

$0.095

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Eastek

USA . 10,000 parts In-Stock

1+ parts

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$0.035

10,000

-

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$0.035

Netroflash

USA . 100 parts In-Stock

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100

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Overview

Unlock the power of precision and reliability with the MMBD3004S-13-F diode by Diodes Incorporated. Crafted with superior quality and expertise, this single-configured diode is designed for a wide range of applications, ensuring peak performance under extreme conditions. With its small outline package style and dual-terminal position, this rectifier diode offers maximum efficiency with a forward voltage of 0.87V and output current of 0.225A. Trust in Diodes Incorporated to provide you with the cutting-edge technology you need to drive your projects forward.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material ensures durability and protection for the diode, making it suitable for various industrial applications.

Maximum Reverse Recovery Time: 0.05 us

The fast reverse recovery time of 0.05 microseconds ensures efficient operation and reduces switching losses in the circuit, leading to improved performance.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this diode can withstand high temperature environments, making it reliable for a wide range of applications.

Terminal Finish: MATTE TIN

The matte tin terminal finish provides excellent solderability and conductivity, ensuring secure connections and stable performance of the diode.

Maximum Repetitive Peak Reverse Voltage: 350 V

The high maximum repetitive peak reverse voltage of 350 volts allows this diode to handle large voltage fluctuations without breakdown, ensuring reliability in the circuit.

Technical Specifications

Diodes & Rectifiers MMBD3004S-13-F attributes and parameters. Explore more Diodes & Rectifiers devices from Diodes Incorporated

Specs

Additional Features:

HIGH RELIABILITY, HIGH SPEED SWITCH

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.87 V

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

4 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

.225 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

350 V

Maximum Reverse Recovery Time:

.05 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MMBD3004S-13-F Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.70

SB

8541.10.00.70

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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