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GDZ13LP3-7

Diodes Incorporated

GDZ13LP3-7 by Diodes Incorporated

GDZ13LP3-7 by Diodes Inc. is a Zener diode with 13V nominal voltage, 5% max voltage tolerance, and 0.25W power dissipation. It operates in temperatures from -55°C to 150°C, suitable for applications requiring precise voltage regulation in compact electronic devices due to its chip carrier package style and surface mount capability.

Median Price

$0.064

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 8,959 parts In-Stock

1+ parts

$0.110

100+ parts

$0.041

1k+ parts

$0.035

10k+ parts

$0.026

8,959

$0.110

$0.041

$0.035

$0.026

DigiKey

USA . 9,980 parts In-Stock

1+ parts

$0.130

100+ parts

$0.046

1k+ parts

$0.038

10k+ parts

$0.030

9,980

$0.130

$0.046

$0.038

$0.030

Arrow

USA . 2,500 parts In-Stock

1+ parts

-

100+ parts

-

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10k+ parts

$0.018

2,500

-

-

-

$0.018

Verical

USA . 2,500 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

$0.018

10k+ parts

-

2,500

-

-

$0.018

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

ACDS - Activité Composants Distribution Service

France . 10,000 parts In-Stock

1+ parts

-

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10,000

-

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Bristol Electronics

USA . 10,000 parts In-Stock

1+ parts

-

100+ parts

$0.150

1k+ parts

$0.045

10k+ parts

$0.030

10,000

-

$0.150

$0.045

$0.030

Dan-Mar Components

USA . 10,000 parts In-Stock

1+ parts

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10,000

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Component Stockers USA

USA . 27,285 parts In-Stock

1+ parts

$0.020

100+ parts

$0.020

1k+ parts

$0.020

10k+ parts

$0.020

27,285

$0.020

$0.020

$0.020

$0.020

Advanced Electronics

New Zealand . 2,500 parts In-Stock

1+ parts

$0.112

100+ parts

$0.102

1k+ parts

$0.092

10k+ parts

-

2,500

$0.112

$0.102

$0.092

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Corohmni

South Africa . 203 parts In-Stock

1+ parts

$0.135

100+ parts

-

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203

$0.135

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Native Components

USA . 813 parts In-Stock

1+ parts

$7.190

100+ parts

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813

$7.190

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QUARKTWIN TECHNOLOGY LTD

USA . 20,194 parts In-Stock

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20,194

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Lixinc

USA . 7,430 parts In-Stock

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7,430

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

1+ parts

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5,000

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Northwest PG Solutions

USA . 1,256 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

$7.046

10k+ parts

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1,256

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$7.046

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Overview

Upgrade your electronic devices with the GDZ13LP3-7 Zener Diode by Diodes Incorporated. Known for their high-quality components, Diodes Incorporated offers reliable solutions for a wide range of applications. The GDZ13LP3-7 Zener Diode provides a stable voltage reference, ensuring optimal performance and protection for your circuits. With its compact chip carrier package and impressive temperature range, this diode is a versatile and cost-effective choice for your projects. Trust Diodes Incorporated to deliver quality components that meet your needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY packaging provides good protection for the diode, making it durable and reliable for various applications.

Working Test Current: 5 mA

With a working test current of 5 mA, this Zener diode can handle a moderate current flow effectively.

Surface Mount: YES

Being surface mountable makes it easy to integrate into circuit boards, saving space and simplifying assembly.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150°C ensures the diode can withstand elevated temperatures without degradation.

Nominal Reference Voltage: 13 V

The precise nominal reference voltage of 13V makes this Zener diode suitable for voltage regulation applications.

Technical Specifications

Zener Diodes GDZ13LP3-7 attributes and parameters. Explore more Zener Diodes devices from Diodes Incorporated

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

JESD-30 Code:

R-PBCC-N2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

CHIP CARRIER

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.25 W

Nominal Reference Voltage:

13 V

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Voltage Tolerance:

5 %

Working Test Current:

5 mA

Trade Compliance

GDZ13LP3-7 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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