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GC2500035

Diodes Incorporated

GC2500035 by Diodes Incorporated

Diodes Inc. GC2500035 is a 25MHz parallel fundamental crystal oscillator with aging of 5PPM/yr. It features surface mounting and operates at a drive level of 100uW. Ideal for applications requiring precise timing in compact spaces.

Median Price

$0.240

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 450 parts In-Stock

1+ parts

$0.240

100+ parts

-

1k+ parts

-

10k+ parts

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450

$0.240

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-

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Vyrian

USA . 2,031 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,031

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 1,469 parts In-Stock

1+ parts

$4.010

100+ parts

-

1k+ parts

-

10k+ parts

-

1,469

$4.010

-

-

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AZTECH Wire

Italy . 484 parts In-Stock

1+ parts

$12.148

100+ parts

-

1k+ parts

-

10k+ parts

-

484

$12.148

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-

-

Overview

Experience the unmatched precision and reliability of the GC2500035 crystal oscillator by Diodes Incorporated. As a leading manufacturer in the industry, Diodes Incorporated ensures top-notch quality and performance in all their products. This crystal oscillator operates at 25 MHz with minimal aging of 5 PPM/first year, making it ideal for a wide range of applications. With surface mounting features and a drive level of 100 uW, this compact and efficient oscillator delivers exceptional value to customers looking for superior timing solutions. Trust Diodes Incorporated to provide you with the best in crystal oscillators for your electronic needs.

Feature Benefit Bullets

Crystal or Resonator Type: PARALLEL - FUNDAMENTAL

This type of crystal oscillator offers high accuracy and stability at a nominal operating frequency of 25 MHz, making it a reliable choice for precision applications.

Nominal Operating Frequency: 25 MHz

With a consistent operating frequency of 25 MHz, this crystal oscillator ensures reliable performance in various electronic devices and systems.

Aging: 5 PPM/FIRST YEAR

The low aging rate of 5 PPM per year ensures long-term stability and accuracy, making this crystal oscillator a durable and dependable choice.

Mounting Feature: SURFACE MOUNT

The surface mount design allows for easy and secure installation in electronic circuits, providing a convenient and space-saving solution.

Drive Level: 100 uW

With a low drive level of 100 uW, this crystal oscillator consumes minimal power while delivering consistent and precise frequency output.

Physical Dimension: L11.7XB4.8XH4.0 (mm)/L0.461XB0.189XH0.157 (inch)

The compact size of this crystal oscillator makes it ideal for applications where space is limited, without compromising on performance.

Technical Specifications

Crystal Oscillators GC2500035 attributes and parameters. Explore more Crystal Oscillators devices from Diodes Incorporated

Specs

Additional Features:

AT-CUT; TR

Crystal or Resonator Type:

Drive Level:

100 uW

Mounting Feature:

Nominal Operating Frequency:

25 MHz

Physical Dimension:

L11.7XB4.8XH4.0 (mm)/L0.461XB0.189XH0.157 (inch)

Trade Compliance

GC2500035 Crystals & Resonators trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.60.00.60

SB

8541.60.00.60

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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