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GC2500032

Diodes Incorporated

GC2500032 by Diodes Incorporated

Diodes Inc. GC2500032 is a 25MHz parallel fundamental crystal oscillator with aging of 5PPM/yr. It operates at 100uW drive level, suitable for surface mount applications in various electronic devices. Dimensions are L11.7xB4.8xH4.0mm (L0.461xB0.189xH0.157 inch).

Median Price

$0.242

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

< 1k

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 86 parts In-Stock

1+ parts

$0.242

100+ parts

-

1k+ parts

-

10k+ parts

-

86

$0.242

-

-

-

Vyrian

USA . 671 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

671

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 1,097 parts In-Stock

1+ parts

$0.010

100+ parts

-

1k+ parts

-

10k+ parts

-

1,097

$0.010

-

-

-

AZTECH Wire

Italy . 632 parts In-Stock

1+ parts

$10.841

100+ parts

-

1k+ parts

-

10k+ parts

-

632

$10.841

-

-

-

Netroflash

USA . 50 parts In-Stock

1+ parts

-

100+ parts

$0.237

1k+ parts

$0.230

10k+ parts

$0.225

50

-

$0.237

$0.230

$0.225

Overview

Enhance the performance of your electronic devices with the GC2500032 crystal oscillator from Diodes Incorporated. Known for their high-quality manufacturing, Diodes Incorporated delivers reliable and precise components that are essential for a wide range of applications. Whether you're working on telecommunications, industrial control systems, or consumer electronics, this 25 MHz crystal oscillator offers exceptional stability and low aging rates to ensure optimal performance over time. Upgrade your projects with the value and benefits that only Diodes Incorporated can provide.

Feature Benefit Bullets

Crystal or Resonator Type: PARALLEL - FUNDAMENTAL

This type of crystal oscillator provides high accuracy and stability, making it suitable for precise timing applications.

Nominal Operating Frequency: 25 MHz

Operating at 25 MHz allows for a good balance between high performance and power efficiency in various electronic devices.

Aging: 5 PPM/FIRST YEAR

With low aging rate of 5 PPM per year, this crystal oscillator ensures long-term stability and reliability in timing applications.

Mounting Feature: SURFACE MOUNT

The surface mount feature makes it easy to integrate this crystal oscillator into compact electronic designs, saving space and simplifying assembly.

Drive Level: 100 uW

Operating at a low drive level of 100 uW, this crystal oscillator consumes minimal power while maintaining high accuracy in timing signals.

Physical Dimension: L11.7XB4.8XH4.0 (mm)/L0.461XB0.189XH0.157 (inch)

With compact dimensions of 11.7x4.8x4.0 mm (0.461x0.189x0.157 inch), this crystal oscillator is suitable for space-constrained electronic applications.

Technical Specifications

Crystal Oscillators GC2500032 attributes and parameters. Explore more Crystal Oscillators devices from Diodes Incorporated

Specs

Additional Features:

AT-CUT; TR

Crystal or Resonator Type:

Drive Level:

100 uW

Mounting Feature:

Nominal Operating Frequency:

25 MHz

Physical Dimension:

L11.7XB4.8XH4.0 (mm)/L0.461XB0.189XH0.157 (inch)

Trade Compliance

GC2500032 Crystals & Resonators trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.60.00.60

SB

8541.60.00.60

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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