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GBJ2501-F

Diodes Incorporated

GBJ2501-F by Diodes Incorporated

GBJ2501-F by Diodes Inc. is a bridge rectifier diode with 4 elements, max output current of 25A, and max repetitive peak reverse voltage of 100V. It is used in applications requiring rectification of AC to DC power sources, such as power supplies and motor drives. Operating temp range: -65°C to 150°C.

Median Price

$2.385

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Element14

Singapore . 22 parts In-Stock

1+ parts

$1.400

100+ parts

$1.008

1k+ parts

-

10k+ parts

-

22

$1.400

$1.008

-

-

Farnell

UK . 22 parts In-Stock

1+ parts

$2.190

100+ parts

$1.319

1k+ parts

$0.922

10k+ parts

-

22

$2.190

$1.319

$0.922

-

Newark

USA . 6 parts In-Stock

1+ parts

$2.580

100+ parts

-

1k+ parts

$1.040

10k+ parts

$0.827

6

$2.580

-

$1.040

$0.827

DigiKey

USA . 60 parts In-Stock

1+ parts

$2.610

100+ parts

$1.566

1k+ parts

$0.927

10k+ parts

$0.787

60

$2.610

$1.566

$0.927

$0.787

Mouser Electronics

USA . 39 parts In-Stock

1+ parts

$2.610

100+ parts

-

1k+ parts

$0.927

10k+ parts

$0.900

39

$2.610

-

$0.927

$0.900

Verical

USA . 2,310 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.840

10k+ parts

-

2,310

-

-

$0.840

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Continental Prestige Electronics

USA . 19 parts In-Stock

1+ parts

$1.420

100+ parts

$1.110

1k+ parts

$0.729

10k+ parts

-

19

$1.420

$1.110

$0.729

-

Microchip USA

USA . 8,071 parts In-Stock

1+ parts

$12.090

100+ parts

$12.020

1k+ parts

$11.980

10k+ parts

$11.940

8,071

$12.090

$12.020

$11.980

$11.940

Native Components

USA . 172 parts In-Stock

1+ parts

$15.980

100+ parts

-

1k+ parts

-

10k+ parts

-

172

$15.980

-

-

-

Northwest PG Solutions

USA . 624 parts In-Stock

1+ parts

$17.578

100+ parts

$15.820

1k+ parts

-

10k+ parts

-

624

$17.578

$15.820

-

-

QUARKTWIN TECHNOLOGY LTD

USA . 24,534 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

24,534

-

-

-

-

Perfect Parts

USA . 171 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

171

-

-

-

-

Eastek

USA . 15 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

15

-

-

-

-

Overview

Enhance your electronic projects with the GBJ2501-F by Diodes Incorporated. Known for their superior quality and reliability, Diodes Incorporated offers a wide range of bridge rectifier diodes designed to meet your specific needs. The GBJ2501-F is a versatile component suitable for various applications, providing efficient rectification and ensuring optimal performance. With its high output current, low forward voltage, and durable construction, this bridge rectifier diode delivers exceptional value and benefits to customers looking for a reliable solution for their electronic designs. Trust Diodes Incorporated to provide you with the best components for your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides durability and protection, making the bridge rectifier diode suitable for various applications.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this bridge rectifier diode can withstand harsh environments and extended use without malfunctioning.

Maximum Output Current: 25 A

The high maximum output current of 25 A allows this bridge rectifier diode to handle heavy loads effectively, making it reliable for power supply applications.

Maximum Repetitive Peak Reverse Voltage: 100 V

With a high maximum repetitive peak reverse voltage, this bridge rectifier diode can handle reverse voltage spikes efficiently and protect the circuit from damage.

Diode Element Material: SILICON

Silicon material in the diode elements ensures high performance and efficiency, making this bridge rectifier diode a reliable choice for rectifying AC to DC.

Technical Specifications

Bridge Rectifier Diodes GBJ2501-F attributes and parameters. Explore more Bridge Rectifier Diodes devices from Diodes Incorporated

Specs

Case Connection:

ISOLATED

Config:

BRIDGE, 4 ELEMENTS

Diode Element Material:

SILICON

Maximum Forward Voltage (VF):

1.05 V

JESD-30 Code:

R-PSFM-T4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

350 A

No. of Elements:

4

No. of Phases:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

25 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Maximum Repetitive Peak Reverse Voltage:

100 V

Sub-Category:

Bridge Rectifier Diodes

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

GBJ2501-F Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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