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GBJ1504-F

Diodes Incorporated

GBJ1504-F by Diodes Incorporated

GBJ1504-F by Diodes Inc. is a bridge rectifier diode with 4 elements, max output current of 15A, and max repetitive peak reverse voltage of 400V. It is used in applications requiring rectification of AC to DC power such as power supplies and motor drives due to its high efficiency and UL recognition.

Median Price

$0.797

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 99 parts In-Stock

1+ parts

$2.210

100+ parts

$1.321

1k+ parts

$0.966

10k+ parts

$0.840

99

$2.210

$1.321

$0.966

$0.840

Verical

USA . 3,435 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.672

10k+ parts

-

3,435

-

-

$0.672

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Arrow

USA . 516 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.797

10k+ parts

-

516

-

-

$0.797

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 9,370 parts In-Stock

1+ parts

-

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9,370

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-

-

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NAC Semi

USA . 975 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

$1.120

10k+ parts

-

975

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$1.120

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IBS Electronics

USA . 735 parts In-Stock

1+ parts

-

100+ parts

$1.318

1k+ parts

$1.010

10k+ parts

-

735

-

$1.318

$1.010

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Rutronik

Germany . 60 parts In-Stock

1+ parts

-

100+ parts

$0.593

1k+ parts

$0.593

10k+ parts

-

60

-

$0.593

$0.593

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Microchip USA

USA . 4,942 parts In-Stock

1+ parts

$9.685

100+ parts

-

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4,942

$9.685

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Native Components

USA . 261 parts In-Stock

1+ parts

$38.119

100+ parts

-

1k+ parts

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10k+ parts

$36.595

261

$38.119

-

-

$36.595

Northwest PG Solutions

USA . 2,334 parts In-Stock

1+ parts

$41.931

100+ parts

-

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2,334

$41.931

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QUARKTWIN TECHNOLOGY LTD

USA . 22,916 parts In-Stock

1+ parts

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22,916

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Glotronic Ltd.

UK . 19,494 parts In-Stock

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19,494

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GreenTree Electronics

Israel . 19,455 parts In-Stock

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19,455

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Authorized Procurement Solutions

USA . 15,000 parts In-Stock

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15,000

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Perfect Parts

USA . 1,973 parts In-Stock

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1,973

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Overview

Power up your projects with the GBJ1504-F by Diodes Incorporated! As a leading manufacturer in the industry, Diodes Incorporated delivers top-quality Bridge Rectifier Diodes that offer reliable performance and durability. The GBJ1504-F is perfect for a wide range of applications, providing customers with value and benefits that exceed expectations. With its high efficiency and superior design, this product ensures optimal functionality while meeting the highest standards of quality. Trust Diodes Incorporated to deliver the solutions you need for all your electronic projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and thermal stability, ensuring a longer lifespan for the bridge rectifier diode.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this bridge rectifier diode can withstand demanding operating conditions without compromising performance.

Maximum Output Current: 15 A

The high maximum output current allows this bridge rectifier diode to efficiently handle heavy loads, making it suitable for various applications.

Maximum Repetitive Peak Reverse Voltage: 400 V

The high maximum repetitive peak reverse voltage rating ensures that the bridge rectifier diode can handle high reverse voltages reliably, making it ideal for use in diverse electronic circuits.

Diode Element Material: SILICON

Silicon is a common semiconductor material known for its efficiency and reliability in diode applications, ensuring optimal performance of this bridge rectifier diode.

Technical Specifications

Bridge Rectifier Diodes GBJ1504-F attributes and parameters. Explore more Bridge Rectifier Diodes devices from Diodes Incorporated

Specs

Case Connection:

ISOLATED

Config:

BRIDGE, 4 ELEMENTS

Diode Element Material:

SILICON

Maximum Forward Voltage (VF):

1.05 V

JESD-30 Code:

R-PSFM-T4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

240 A

No. of Elements:

4

No. of Phases:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

15 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Maximum Repetitive Peak Reverse Voltage:

400 V

Sub-Category:

Bridge Rectifier Diodes

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

GBJ1504-F Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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