Loading...

G8327A046

Diodes Incorporated

G8327A046 by Diodes Incorporated

Diodes Inc. G8327A046 crystal oscillator offers 20 ppm frequency tolerance, 108% stability, and 50k ohm series resistance. Ideal for applications requiring 0.032768 MHz nominal frequency, such as IoT devices and precision timing circuits in industrial automation. Operating range from -40°C to 85°C with compact dimensions of 3.2mm x 1.5mm x 0.9 mm for surface mount installation.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Sensible Micro Corp

USA . 2,882 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,882

-

-

-

-

Vyrian

USA . 238 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

238

-

-

-

-

Nova Conductors

Japan . 81 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

81

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 544 parts In-Stock

1+ parts

$0.010

100+ parts

-

1k+ parts

-

10k+ parts

-

544

$0.010

-

-

-

AZTECH Wire

Italy . 845 parts In-Stock

1+ parts

$19.591

100+ parts

-

1k+ parts

-

10k+ parts

-

845

$19.591

-

-

-

Aranea Global

USA . 2,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,000

-

-

-

-

Overview

Experience unmatched precision and reliability with the G8327A046 crystal oscillator by Diodes Incorporated. As a leading manufacturer in the industry, Diodes Incorporated guarantees top-quality components that deliver exceptional performance in a wide range of applications. The G8327A046 boasts a frequency tolerance of 20 ppm and a frequency stability of 108%, making it ideal for critical timing applications where accuracy is paramount. With a series resistance of 50000 ohms and a low drive level of 0.1 uW, this crystal oscillator offers outstanding value and benefits to customers looking for superior quality and consistency in their electronic designs. Trust Diodes Incorporated for all your crystal oscillator needs and experience the difference in performance today!

Feature Benefit Bullets

Frequency Tolerance: 20 ppm

This tight frequency tolerance ensures accurate timing in various applications.

Frequency Stability: 108%

High frequency stability ensures consistent performance over time, making it reliable for long-term use.

Series Resistance: 50000 ohm

Low series resistance allows for efficient power consumption and minimal signal loss.

Minimum Operating Temperature: -40 °C

Wide temperature range allows for operation in extreme environments.

Crystal or Resonator Type: PARALLEL - FUNDAMENTAL

This type is known for high precision and stability in frequency generation.

Nominal Operating Frequency: 0.032768 MHz

Suitable frequency for various timekeeping and synchronization applications.

Aging: 3 PPM/FIRST YEAR

Low aging rate ensures long-term stability and accuracy of the oscillator.

Load Capacitance: 12.5 pF

Optimal load capacitance for efficient operation and signal integrity.

Mounting Feature: SURFACE MOUNT

Surface mounting allows for easy integration onto PCBs, saving space and simplifying assembly.

Drive Level: 0.1 uW

Low drive level ensures minimal power consumption while maintaining oscillation.

Physical Dimension: 3.2mm x 1.5mm x 0.9 mm

Compact size enables integration into small electronic devices without compromising performance.

Maximum Operating Temperature: 85 °C

High maximum operating temperature allows for reliable performance even in high-temperature environments.

Technical Specifications

Crystal Oscillators G8327A046 attributes and parameters. Explore more Crystal Oscillators devices from Diodes Incorporated

Specs

Crystal or Resonator Type:

Drive Level:

.1 uW

Frequency Stability:

108 %

Frequency Tolerance:

Load Capacitance:

12.5 pF

Mounting Feature:

Nominal Operating Frequency:

.032768 MHz

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Physical Dimension:

3.2mm x 1.5mm x 0.9 mm

Series Resistance:

50000 ohm

Trade Compliance

G8327A046 Crystals & Resonators trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.60.00.10

SB

8541.60.00.25

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 5