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G83270021

Diodes Incorporated

G83270021 by Diodes Incorporated

Diodes Inc. G83270021 crystal oscillator offers 20 ppm frequency tolerance, 108% stability, and 70k ohm series resistance. Ideal for applications requiring 0.032768 MHz nominal frequency, such as IoT devices and wearables due to its compact surface mount design and low power consumption of 0.1 uW.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Flip Electronics

USA . 15,500 parts In-Stock

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15,500

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Vyrian

USA . 3,902 parts In-Stock

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3,902

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Nova Conductors

Japan . 75 parts In-Stock

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75

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 1,223 parts In-Stock

1+ parts

$2.010

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1,223

$2.010

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AZTECH Wire

Italy . 710 parts In-Stock

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$6.097

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710

$6.097

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Perfect Parts

USA . 124,320 parts In-Stock

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124,320

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Kepictronics

USA . 59,900 parts In-Stock

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59,900

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Bastille Electronics

Australia . 46 parts In-Stock

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Overview

Elevate your electronic designs with the G83270021 crystal oscillator from Diodes Incorporated. Crafted with precision and quality, this product offers unmatched frequency stability and a tight tolerance of 20 ppm. Ideal for a wide range of applications, this crystal oscillator boasts a series resistance of 70000 ohm and a low drive level of 0.1 uW. With a compact surface mount design and a wide operating temperature range from -40 to 85°C, this crystal oscillator delivers reliable performance and longevity. Trust Diodes Incorporated to provide you with superior components that enhance the functionality of your devices.

Feature Benefit Bullets

Frequency Tolerance: 20 ppm

High precision in frequency, allowing for accurate timing in various applications.

Frequency Stability: 108%

Provides stable and reliable frequency output over time, ensuring consistent performance.

Series Resistance: 70000 ohm

Optimal resistance value for efficient signal processing and transmission.

Minimum Operating Temperature: -40 °C

Capable of functioning in extreme low temperature conditions, suitable for diverse environments.

Crystal or Resonator Type: PARALLEL - FUNDAMENTAL

Utilizes a high-quality crystal resonator type for accurate and precise frequency generation.

Nominal Operating Frequency: 0.032768 MHz

Operates at a specific frequency ideal for various electronic applications.

Aging: 3 PPM/FIRST YEAR

Negligible aging rate, maintaining frequency accuracy over extended periods.

Load Capacitance: 12.5 pF

Optimal capacitance value for efficient energy consumption and signal processing.

Mounting Feature: SURFACE MOUNT

Convenient surface mount design for easy integration into circuit boards or electronic devices.

Drive Level: 0.1 uW

Low power consumption for energy-efficient operation.

Physical Dimension: L3.2XB1.5XH0.8 (mm)/L0.126XB0.059XH0.031 (inch)

Compact size for space-saving installation in compact electronic devices.

Maximum Operating Temperature: 85 °C

Capable of withstanding high temperatures, ensuring reliable operation in harsh environments.

Technical Specifications

Crystal Oscillators G83270021 attributes and parameters. Explore more Crystal Oscillators devices from Diodes Incorporated

Specs

Additional Features:

AT CUT; TR, 7 INCH

Crystal or Resonator Type:

Drive Level:

.1 uW

Frequency Stability:

108 %

Frequency Tolerance:

Load Capacitance:

12.5 pF

Mounting Feature:

Nominal Operating Frequency:

.032768 MHz

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Physical Dimension:

L3.2XB1.5XH0.8 (mm)/L0.126XB0.059XH0.031 (inch)

Series Resistance:

70000 ohm

Trade Compliance

G83270021 Crystals & Resonators trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.60.00.10

SB

8541.60.00.25

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

Category top products 20

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