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FY1020003

Diodes Incorporated

FY1020003 by Diodes Incorporated

Diodes Inc. FY1020003 is a 10.2 MHz crystal oscillator with 3 PPM aging rate. It features surface mounting and operates at a drive level of 10 uW. Ideal for applications requiring precise frequency control in compact spaces.

Median Price

$0.680

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 869 parts In-Stock

1+ parts

$0.680

100+ parts

$0.495

1k+ parts

$0.401

10k+ parts

$0.385

869

$0.680

$0.495

$0.401

$0.385

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 15 parts In-Stock

1+ parts

$0.390

100+ parts

-

1k+ parts

-

10k+ parts

-

15

$0.390

-

-

-

Vyrian

USA . 6,678 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,678

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 525 parts In-Stock

1+ parts

$0.590

100+ parts

-

1k+ parts

-

10k+ parts

-

525

$0.590

-

-

-

AZTECH Wire

Italy . 871 parts In-Stock

1+ parts

$9.054

100+ parts

-

1k+ parts

-

10k+ parts

-

871

$9.054

-

-

-

Overview

Enhance the performance of your electronic devices with the FY1020003 crystal oscillator from Diodes Incorporated. Crafted with precision and expertise, this parallel fundamental type oscillator operates at a nominal frequency of 10.2 MHz, ensuring reliable and accurate timekeeping. With low aging rate of 3 PPM/first year and surface mount design, this crystal oscillator offers unmatched stability and easy integration. Elevate your applications in communications, automotive, and industrial sectors with the superior quality and value that Diodes Incorporated brings to the table. Experience seamless operation and enhanced efficiency with the FY1020003 crystal oscillator today!

Feature Benefit Bullets

Crystal or Resonator Type: PARALLEL - FUNDAMENTAL

This type of crystal oscillator provides stable frequency output, making it a reliable choice for precision applications.

Nominal Operating Frequency: 10.2 MHz

The specific frequency of 10.2 MHz makes this oscillator ideal for applications requiring this exact frequency for optimal performance.

Aging: 3 PPM/FIRST YEAR

With a low aging rate of 3 PPM in the first year, this oscillator ensures long-term frequency stability for consistent operation.

Mounting Feature: SURFACE MOUNT

The surface mount feature allows for easy and secure installation on PCBs, making it convenient for compact design applications.

Drive Level: 10 uW

The low drive level of 10 uW ensures efficient power consumption, ideal for applications where power efficiency is a priority.

Physical Dimension: L5.0XB3.2XH0.9 (mm)/L0.197XB0.126XH0.035 (inch)

With compact dimensions of L5.0XB3.2XH0.9 (mm)/L0.197XB0.126XH0.035 (inch), this oscillator is suitable for space-constrained applications without compromising on performance.

Technical Specifications

Crystal Oscillators FY1020003 attributes and parameters. Explore more Crystal Oscillators devices from Diodes Incorporated

Specs

Additional Features:

AT-CUT; TR

Crystal or Resonator Type:

Drive Level:

10 uW

Mounting Feature:

Nominal Operating Frequency:

10.2 MHz

Physical Dimension:

L5.0XB3.2XH0.9 (mm)/L0.197XB0.126XH0.035 (inch)

Trade Compliance

FY1020003 Crystals & Resonators trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.60.00.50

SB

8541.60.00.25

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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