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FY0800042

Diodes Incorporated

FY0800042 by Diodes Incorporated

Diodes Inc. FY0800042 is an 8MHz parallel fundamental crystal oscillator with aging of 3PPM/yr. It operates at a drive level of 10uW and has surface mounting feature. Ideal for applications requiring precise timing in compact spaces.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 4,526 parts In-Stock

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Nova Conductors

Japan . 100 parts In-Stock

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Semicontronic

India . 610 parts In-Stock

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$0.010

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$0.010

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$0.010

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610

$0.010

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Corohmni

South Africa . 952 parts In-Stock

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$0.412

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952

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Ampacity Inc.

Singapore . 1,107 parts In-Stock

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$2.010

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AZTECH Wire

Italy . 572 parts In-Stock

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Continental Prestige Electronics

USA . 4,101 parts In-Stock

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Argo Parts USA

USA . 2,441 parts In-Stock

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Aranea Global

USA . 100 parts In-Stock

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Overview

Unlock the power of precision with the FY0800042 crystal oscillator by Diodes Incorporated. Expertly crafted for superior performance, this parallel-fundamental type crystal resonator operates at 8 MHz with an aging rate of just 3 PPM in the first year. With a surface mount design and low drive level of 10 uW, this compact oscillator is perfect for a variety of applications. Trust in Diodes Incorporated to deliver unmatched quality and reliability, providing you with the value and benefits you need to stay ahead of the competition. Elevate your projects with the FY0800042 crystal oscillator today.

Feature Benefit Bullets

Crystal or Resonator Type: PARALLEL - FUNDAMENTAL

Parallel fundamental crystals provide excellent frequency stability and low phase noise, making them ideal for high-performance applications.

Nominal Operating Frequency: 8 MHz

Operating at 8 MHz allows for compatibility with a wide range of electronic devices and systems, making this crystal oscillator versatile.

Aging: 3 PPM/FIRST YEAR

With a low aging rate of 3 ppm in the first year, this crystal oscillator maintains accurate frequency over time, ensuring long-term reliability.

Mounting Feature: SURFACE MOUNT

The surface mount feature allows for easy and efficient installation on PCBs, saving space and enabling mass production of electronic devices.

Drive Level: 10 uW

Operating at a low drive level of 10 uW minimizes power consumption, making this crystal oscillator energy-efficient and suitable for battery-powered devices.

Physical Dimension: L5.0XB3.2XH0.9 (mm)/L0.197XB0.126XH0.035 (inch)

With compact dimensions of 5.0mm x 3.2mm x 0.9mm (L x W x H), this crystal oscillator is space-saving and well-suited for small form factor electronics.

Technical Specifications

Crystal Oscillators FY0800042 attributes and parameters. Explore more Crystal Oscillators devices from Diodes Incorporated

Specs

Additional Features:

AT-CUT; TR

Crystal or Resonator Type:

Drive Level:

10 uW

Mounting Feature:

Nominal Operating Frequency:

8 MHz

Physical Dimension:

L5.0XB3.2XH0.9 (mm)/L0.197XB0.126XH0.035 (inch)

Trade Compliance

FY0800042 Crystals & Resonators trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.60.00.50

SB

8541.60.00.25

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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