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FP0800056Z

Diodes Incorporated

FP0800056Z by Diodes Incorporated

Diodes Inc. FP0800056Z crystal oscillator offers 8MHz nominal frequency with 30ppm tolerance and 30% stability. Ideal for applications requiring precise timing, such as communication systems and consumer electronics. Features surface mounting, -40 to 85°C operating range, and low drive level of 10uW.

Median Price

$1.370

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 5,129 parts In-Stock

1+ parts

$1.290

100+ parts

$1.040

1k+ parts

$0.725

10k+ parts

$0.724

5,129

$1.290

$1.040

$0.725

$0.724

DigiKey

USA . 4,062 parts In-Stock

1+ parts

$1.450

100+ parts

$1.094

1k+ parts

$0.951

10k+ parts

$0.827

4,062

$1.450

$1.094

$0.951

$0.827

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Northwest PG Solutions

USA . 338 parts In-Stock

1+ parts

$3.469

100+ parts

-

1k+ parts

-

10k+ parts

-

338

$3.469

-

-

-

Native Components

USA . 190 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$3.059

10k+ parts

-

190

-

-

$3.059

-

Overview

Elevate your electronic devices with the FP0800056Z crystal oscillator from Diodes Incorporated. With exceptional frequency tolerance and stability, this product ensures reliable and precise performance. Ideal for a wide range of applications, this crystal oscillator offers high-quality manufacturing and exceptional value to customers. Upgrade your technology with the FP0800056Z and experience the benefits of superior performance and accuracy in your devices.

Feature Benefit Bullets

Frequency Tolerance: 30 ppm

This tight frequency tolerance ensures accurate and reliable operation of the crystal oscillator.

Frequency Stability: 30%

The high frequency stability of 30% ensures that the oscillator will maintain its frequency output over a wide range of conditions.

Series Resistance: 60 ohm

The low series resistance of 60 ohm ensures efficient power transfer and minimal signal loss in the oscillator circuit.

Minimum Operating Temperature: -40 °C

The wide minimum operating temperature range of -40 °C ensures that the oscillator can function reliably in harsh environments.

Crystal or Resonator Type: PARALLEL - FUNDAMENTAL

This type of crystal or resonator offers excellent frequency stability and low phase noise, making it ideal for precision applications.

Nominal Operating Frequency: 8 MHz

The 8 MHz operating frequency makes this oscillator suitable for a wide range of applications that require this specific frequency.

Aging: 3 PPM/FIRST YEAR

The low aging rate of 3 PPM per year ensures long-term frequency stability and accuracy of the oscillator.

Load Capacitance: 18 pF

The 18 pF load capacitance ensures optimal performance of the oscillator in terms of frequency stability and signal integrity.

Mounting Feature: SURFACE MOUNT

The surface mounting feature makes it easy to integrate the oscillator into compact electronic devices and PCB designs.

Drive Level: 10 uW

The low drive level requirement of 10 uW minimizes power consumption and ensures efficient operation of the oscillator.

Physical Dimension: L7.0XB5.0XH1.1 (mm)/L0.276XB0.197XH0.043 (inch)

The compact size of the oscillator allows for easy integration into small electronic devices and PCB layouts.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature of 85 °C ensures reliable operation of the oscillator even in extreme heat conditions.

Technical Specifications

Crystal Oscillators FP0800056Z attributes and parameters. Explore more Crystal Oscillators devices from Diodes Incorporated

Specs

Additional Features:

AT-CUT; TR, 7 INCH

Crystal or Resonator Type:

Drive Level:

10 uW

Frequency Stability:

30 %

Frequency Tolerance:

Load Capacitance:

18 pF

Mounting Feature:

Nominal Operating Frequency:

8 MHz

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Physical Dimension:

L7.0XB5.0XH1.1 (mm)/L0.276XB0.197XH0.043 (inch)

Series Resistance:

60 ohm

Trade Compliance

FP0800056Z Crystals & Resonators trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.60.00.50

SB

8541.60.00.25

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

Category top products 20

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