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FL2000057

Diodes Incorporated

FL2000057 by Diodes Incorporated

Diodes Inc. FL2000057 crystal oscillator has 60 ohm series resistance, operates at 20 MHz frequency with 3 PPM aging. Ideal for surface mount applications, it features parallel fundamental type and gold over nickel terminal finish.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,374 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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4,374

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Nova Conductors

Japan . 200 parts In-Stock

1+ parts

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200

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 213 parts In-Stock

1+ parts

$3.010

100+ parts

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213

$3.010

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AZTECH Wire

Italy . 442 parts In-Stock

1+ parts

$6.275

100+ parts

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10k+ parts

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442

$6.275

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Bastille Electronics

Australia . 100 parts In-Stock

1+ parts

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100

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Overview

Enhance the performance of your electronic devices with the FL2000057 crystal oscillator from Diodes Incorporated. With a series resistance of 60 ohms and a drive level of 10 uW, this surface mount crystal oscillator operates at a nominal frequency of 20 MHz, offering precise timing and stability for various applications. The GOLD OVER NICKEL terminal finish ensures longevity and reliability, while the PARALLEL - FUNDAMENTAL crystal type guarantees optimal performance. Trust in Diodes Incorporated's expertise in crystal oscillators to elevate your products to new heights of efficiency and accuracy.

Feature Benefit Bullets

Series Resistance: 60 ohm

Low series resistance ensures efficient transmission of signals and reduces power consumption.

Terminal Finish: GOLD OVER NICKEL

Gold over nickel finish provides excellent conductivity and resistance to corrosion, ensuring long-term reliability.

Crystal or Resonator Type: PARALLEL - FUNDAMENTAL

Parallel fundamental crystal type offers high stability and precision in frequency control.

Nominal Operating Frequency: 20 MHz

Operating at 20 MHz makes this crystal oscillator suitable for a wide range of applications that require precise timing.

Aging: 3 PPM/FIRST YEAR

Low aging rate of 3 PPM per year ensures long-term frequency stability and accurate timing over extended periods.

Mounting Feature: SURFACE MOUNT

Surface mount design allows for easy installation on PCBs and saves space, making it ideal for compact electronic devices.

Drive Level: 10 uW

Low drive level of 10 uW ensures energy efficiency and reduces heat generation, making it suitable for power-sensitive applications.

Physical Dimension: L3.2XB2.5XH0.65 (mm)/L0.126XB0.098XH0.026 (inch)

Compact size of L3.2XB2.5XH0.65 mm allows for easy integration into small electronic devices while providing high performance.

Technical Specifications

Crystal Oscillators FL2000057 attributes and parameters. Explore more Crystal Oscillators devices from Diodes Incorporated

Specs

Additional Features:

AT-CUT; TR

Crystal or Resonator Type:

Drive Level:

10 uW

JESD-609 Code:

e4

Mounting Feature:

Nominal Operating Frequency:

20 MHz

Physical Dimension:

L3.2XB2.5XH0.65 (mm)/L0.126XB0.098XH0.026 (inch)

Series Resistance:

60 ohm

Terminal Finish:

GOLD OVER NICKEL

Trade Compliance

FL2000057 Crystals & Resonators trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.60.00.50

SB

8541.60.00.25

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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