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FL1200135

Diodes Incorporated

FL1200135 by Diodes Incorporated

PARALLEL - FUNDAMENTAL; Mounting Feature: SURFACE MOUNT; Frequency Tolerance: 30 ppm; Aging: 5 PPM/FIRST YEAR; Nominal Operating Frequency: 12 MHz; Frequency Stability: 50 %;

Median Price

$0.247

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 772 parts In-Stock

1+ parts

$0.560

100+ parts

$0.427

1k+ parts

$0.371

10k+ parts

$0.324

772

$0.560

$0.427

$0.371

$0.324

Arrow

USA . 9,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.241

10k+ parts

-

9,000

-

-

$0.241

-

Verical

USA . 9,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.247

10k+ parts

-

9,000

-

-

$0.247

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,222 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,222

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 607 parts In-Stock

1+ parts

$6.678

100+ parts

-

1k+ parts

-

10k+ parts

-

607

$6.678

-

-

-

QUARKTWIN TECHNOLOGY LTD

USA . 12,873 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

12,873

-

-

-

-

Perfect Parts

USA . 6,720 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,720

-

-

-

-

Northwest PG Solutions

USA . 381 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$6.544

10k+ parts

-

381

-

-

$6.544

-

Technical Specifications

Crystal Oscillators FL1200135 attributes and parameters. Explore more Crystal Oscillators devices from Diodes Incorporated

Specs

Additional Features:

AT CUT; TR, 7 INCH

Crystal or Resonator Type:

Drive Level:

10 uW

Frequency Stability:

50 %

Frequency Tolerance:

JESD-609 Code:

e4

Load Capacitance:

18 pF

Mounting Feature:

Nominal Operating Frequency:

12 MHz

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-20 Cel

Physical Dimension:

L3.2XB2.5XH0.65 (mm)/L0.126XB0.098XH0.026 (inch)

Series Resistance:

100 ohm

Terminal Finish:

GOLD OVER NICKEL

Trade Compliance

FL1200135 Crystals & Resonators trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.60.00.50

SB

8541.60.00.25

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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