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FL1200050

Diodes Incorporated

FL1200050 by Diodes Incorporated

Diodes Inc. FL1200050 crystal oscillator features 80 ohm series resistance, 12 MHz frequency, and 3 PPM aging. Ideal for surface mount applications in various electronic devices requiring a stable clock signal.

Median Price

$0.560

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 2,267 parts In-Stock

1+ parts

$0.560

100+ parts

$0.427

1k+ parts

$0.371

10k+ parts

$0.324

2,267

$0.560

$0.427

$0.371

$0.324

Mouser Electronics

USA . 1,962 parts In-Stock

1+ parts

$0.560

100+ parts

$0.427

1k+ parts

$0.371

10k+ parts

$0.321

1,962

$0.560

$0.427

$0.371

$0.321

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 47 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

47

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 2,067 parts In-Stock

1+ parts

$0.476

100+ parts

-

1k+ parts

-

10k+ parts

-

2,067

$0.476

-

-

-

Continental Prestige Electronics

USA . 3,337 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

-

3,337

-

-

-

-

Argo Parts USA

USA . 2,902 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

-

2,902

-

-

-

-

Aranea Global

USA . 500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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500

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-

Overview

Unlock the power of precise timing with the FL1200050 crystal oscillator from Diodes Incorporated. With a series resistance of 80 ohms and a drive level of 10 uW, this high-quality component offers exceptional performance and reliability for a wide range of applications. Whether you're designing telecommunications equipment, industrial controls, or consumer electronics, the FL1200050 delivers the accuracy and stability you need. Trust in Diodes Incorporated's reputation for excellence and choose the FL1200050 for your next project.

Feature Benefit Bullets

Series Resistance: 80 ohm

Low series resistance helps in efficient power transfer and reduces signal loss, making this oscillator reliable and energy-efficient.

Terminal Finish: GOLD OVER NICKEL

The gold over nickel terminal finish provides excellent conductivity and corrosion resistance, ensuring a reliable connection and longevity of the product.

Crystal or Resonator Type: PARALLEL - FUNDAMENTAL

The parallel fundamental crystal or resonator type ensures accurate frequency stability and low phase noise, making it suitable for precision applications.

Nominal Operating Frequency: 12 MHz

The 12 MHz operating frequency offers a good balance between speed and power consumption, making this oscillator ideal for a wide range of applications.

Aging: 3 PPM/FIRST YEAR

With low aging rate of 3 PPM/first year, this oscillator offers long-term frequency stability, ensuring reliable performance over time.

Mounting Feature: SURFACE MOUNT

The surface mount design makes installation and replacement of this oscillator easy and convenient, saving time and effort in manufacturing and maintenance.

Drive Level: 10 uW

The low drive level requirement of 10 uW minimizes power consumption and heat generation, making this oscillator energy-efficient and suitable for battery-powered devices.

Physical Dimension: L3.2XB2.5XH0.65 (mm)/L0.126XB0.098XH0.026 (inch)

The compact and slim physical dimensions make this oscillator easy to integrate into space-constrained designs, offering flexibility in layout and assembly.

Technical Specifications

Crystal Oscillators FL1200050 attributes and parameters. Explore more Crystal Oscillators devices from Diodes Incorporated

Specs

Additional Features:

AT-CUT; TR

Crystal or Resonator Type:

Drive Level:

10 uW

JESD-609 Code:

e4

Mounting Feature:

Nominal Operating Frequency:

12 MHz

Physical Dimension:

L3.2XB2.5XH0.65 (mm)/L0.126XB0.098XH0.026 (inch)

Series Resistance:

80 ohm

Terminal Finish:

GOLD OVER NICKEL

Trade Compliance

FL1200050 Crystals & Resonators trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.60.00.50

SB

8541.60.00.25

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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