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ES3GB

Diodes Incorporated

ES3GB by Diodes Incorporated

ES3GB by Diodes Inc. is a single rectifier diode with 400V peak reverse voltage, 3A output current, and 0.025us reverse recovery time. It is used for efficiency applications in a temperature range of -55 to 150°C. The diode has a small outline package shape and matte tin terminal finish for surface mount assembly.

Median Price

$0.024

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 3,000,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

$0.217

3,000,000

-

-

-

$0.217

Chip1Stop

Japan . 7,310 parts In-Stock

1+ parts

-

100+ parts

$0.041

1k+ parts

$0.027

10k+ parts

$0.018

7,310

-

$0.041

$0.027

$0.018

Arrow

USA . 6,810 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.008

6,810

-

-

-

$0.008

Verical

USA . 6,810 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.008

6,810

-

-

-

$0.008

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 300 parts In-Stock

1+ parts

$0.071

100+ parts

-

1k+ parts

-

10k+ parts

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300

$0.071

-

-

-

DigiKey Marketplace

USA . 250 parts In-Stock

1+ parts

$0.350

100+ parts

-

1k+ parts

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250

$0.350

-

-

-

Vyrian

USA . 755,118 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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755,118

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-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Semicontronic

India . 754,756 parts In-Stock

1+ parts

$0.025

100+ parts

$0.024

1k+ parts

$0.024

10k+ parts

-

754,756

$0.025

$0.024

$0.024

-

Continental Prestige Electronics

USA . 4,940 parts In-Stock

1+ parts

$0.071

100+ parts

-

1k+ parts

-

10k+ parts

$0.070

4,940

$0.071

-

-

$0.070

Argo Parts USA

USA . 2,645 parts In-Stock

1+ parts

$0.071

100+ parts

-

1k+ parts

-

10k+ parts

$0.069

2,645

$0.071

-

-

$0.069

Netroflash

USA . 100 parts In-Stock

1+ parts

$0.071

100+ parts

$0.070

1k+ parts

-

10k+ parts

-

100

$0.071

$0.070

-

-

Aztec Data Supply Inc.

USA . 159 parts In-Stock

1+ parts

$0.108

100+ parts

-

1k+ parts

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10k+ parts

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159

$0.108

-

-

-

Kepictronics

USA . 125,600 parts In-Stock

1+ parts

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100+ parts

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125,600

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Metaverse IC Inc.

Canada . 125,600 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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125,600

-

-

-

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QUARKTWIN TECHNOLOGY LTD

USA . 24,399 parts In-Stock

1+ parts

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100+ parts

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24,399

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Authorized Procurement Solutions

USA . 1,000 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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1,000

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CPlus Electronics

USA . 120 parts In-Stock

1+ parts

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100+ parts

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120

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Perfect Parts

USA . 11 parts In-Stock

1+ parts

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100+ parts

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11

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Overview

Unlock the power of efficiency with the ES3GB diode by Diodes Incorporated. Manufactured with precision and expertise, this small outline rectifier diode offers a reliable solution for a variety of applications. With a maximum output current of 3A and a maximum repetitive peak reverse voltage of 400V, the ES3GB provides high-quality performance in a compact package. Trust Diodes Incorporated to deliver cutting-edge technology that exceeds expectations, making your projects more efficient and effective.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy package body material provides durability and protection for the diode, ensuring long-term reliability.

Config: SINGLE

Single configuration makes the diode easy to use and integrate into various circuit designs.

Surface Mount: YES

Surface mount capability allows for easy and efficient PCB assembly.

Maximum Reverse Recovery Time: 0.025 us

Fast reverse recovery time ensures efficient operation and minimal power loss.

Package Shape: RECTANGULAR

Rectangular package shape provides compact and space-saving design for applications with limited space.

No. of Terminals: 2

Two terminals provide simple and straightforward connection in the circuit.

Package Style (Meter): SMALL OUTLINE

Small outline package style enables easy integration into various electronic systems.

Application: EFFICIENCY

Designed for efficiency, making it ideal for applications where power consumption needs to be minimized.

Maximum Operating Temperature: 150 °C

High maximum operating temperature range allows for reliable performance in various environmental conditions.

Minimum Operating Temperature: -55 °C

Wide temperature range ensures the diode can function in extreme cold conditions as well.

Terminal Finish: MATTE TIN

Matte tin finish provides good conductivity and solderability for reliable connections.

Terminal Position: DUAL

Dual terminal position allows for versatile mounting options and flexibility in circuit design.

Diode Type: RECTIFIER DIODE

Rectifier diode type is suitable for converting AC to DC power, making it an essential component in power supplies.

Maximum Forward Voltage (VF): 1.25 V

Low forward voltage drop helps minimize power loss and improve efficiency in the circuit.

Maximum Output Current: 3 A

High output current rating allows for handling large amounts of current in the circuit.

Terminal Form: C BEND

C bend terminal form provides secure and reliable connections on the PCB.

Maximum Repetitive Peak Reverse Voltage: 400 V

High reverse voltage rating makes the diode suitable for high voltage applications.

Maximum Non Repetitive Peak Forward Current: 100 A

High peak forward current rating allows the diode to handle short-term surge currents without damage.

Diode Element Material: SILICON

Silicon diode element material offers high performance and reliability for various electronic applications.

Technical Specifications

Diodes & Rectifiers ES3GB attributes and parameters. Explore more Diodes & Rectifiers devices from Diodes Incorporated

Specs

Application:

EFFICIENCY

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.25 V

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

100 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

3 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

400 V

Maximum Reverse Recovery Time:

.025 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

ES3GB Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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