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DXT3904-13

Diodes Incorporated

DXT3904-13 by Diodes Incorporated

DXT3904-13 by Diodes Inc. is a NPN BJT transistor with 40V VCEO, 1W Ptot, and 300MHz fT. Ideal for switching applications, it has a single configuration in a small outline package suitable for surface mount technology.

Median Price

$0.203

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 4,863 parts In-Stock

1+ parts

$0.450

100+ parts

$0.146

1k+ parts

$0.123

10k+ parts

$0.115

4,863

$0.450

$0.146

$0.123

$0.115

Newark

USA . 2,279 parts In-Stock

1+ parts

$0.576

100+ parts

$0.286

1k+ parts

$0.188

10k+ parts

-

2,279

$0.576

$0.286

$0.188

-

DigiKey

USA . 11,590 parts In-Stock

1+ parts

$0.610

100+ parts

$0.240

1k+ parts

$0.162

10k+ parts

$0.123

11,590

$0.610

$0.240

$0.162

$0.123

Verical

USA . 72,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.100

72,500

-

-

-

$0.100

Farnell

UK . 2,279 parts In-Stock

1+ parts

-

100+ parts

$0.197

1k+ parts

$0.117

10k+ parts

$0.100

2,279

-

$0.197

$0.117

$0.100

Arrow

USA . 1,481 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.072

10k+ parts

-

1,481

-

-

$0.072

-

Element14

Singapore . 725 parts In-Stock

1+ parts

-

100+ parts

$0.203

1k+ parts

$0.127

10k+ parts

$0.125

725

-

$0.203

$0.127

$0.125

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Continental Prestige Electronics

USA . 3,015 parts In-Stock

1+ parts

$0.354

100+ parts

$0.196

1k+ parts

$0.111

10k+ parts

$0.088

3,015

$0.354

$0.196

$0.111

$0.088

Andel Nordic

Denmark . 4,840 parts In-Stock

1+ parts

$11.350

100+ parts

-

1k+ parts

$10.896

10k+ parts

$10.896

4,840

$11.350

-

$10.896

$10.896

Lixinc

USA . 13,970 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

13,970

-

-

-

-

Glotronic Ltd.

UK . 3,790 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,790

-

-

-

-

Kepictronics

USA . 2,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,500

-

-

-

-

Eastek

USA . 2,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,500

-

-

-

-

Northwest PG Solutions

USA . 2,206 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,206

-

-

-

-

Perfect Parts

USA . 2,112 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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2,112

-

-

-

-

Authorized Procurement Solutions

USA . 2,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,000

-

-

-

-

Native Components

USA . 82 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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82

-

-

-

-

Overview

Unleash the power of technology with the DXT3904-13 by Diodes Incorporated, a cutting-edge Small Signal Bipolar Junction Transistor (BJT) designed for switching applications. Manufactured with precision and expertise, this NPN transistor offers unparalleled performance and reliability. With a maximum power dissipation of 1W and a transition frequency of 300 MHz, this transistor delivers high-speed switching capabilities. Its compact design and matte tin terminal finish make it ideal for surface mount applications. Upgrade your electronic projects with the DXT3904-13 and experience seamless functionality like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: NPN

NPN transistors are commonly used in switching applications, making this transistor suitable for various switching purposes.

Configuration: SINGLE

Simplifies circuit design and ensures easy integration into existing electronic setups.

Transistor Application: SWITCHING

Specifically designed for switching applications, offering reliable performance in such scenarios.

Surface Mount: YES

Allows for easy and efficient PCB assembly, saving time and effort during production.

Package Shape: RECTANGULAR

Space-efficient design that fits well in modern electronic devices and circuit boards.

Maximum Power Dissipation: 1 W

Can handle high power levels without overheating, ensuring stable operation.

Minimum DC Current Gain (hFE): 30

Provides consistent amplification of current signal, maintaining signal integrity.

Maximum Operating Temperature: 150 °C

Can operate in high-temperature environments without performance degradation.

Maximum Collector-Emitter Voltage: 40 V

Supports higher voltage applications, extending the range of potential uses.

Transistor Element Material: SILICON

Offers high reliability and efficiency, common in modern semiconductor technology.

Nominal Transition Frequency (fT): 300 MHz

Capable of fast signal switching with a high frequency response, making it suitable for high-speed applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) DXT3904-13 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

30

JESD-30 Code:

R-PSSO-F3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

1 W

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

FLAT

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

250 ns

Maximum Turn On Time (ton):

70 ns

Trade Compliance

DXT3904-13 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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