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DRDNB21D-7

Diodes Incorporated

DRDNB21D-7 by Diodes Incorporated

DRDNB21D-7 by Diodes Inc. is a NPN BJT with 2 elements, diode, and resistor in common emitter configuration. It has a max collector-emitter voltage of 50V, operating temp up to 150°C, and DC current gain of min 80. Ideal for switching applications due to its small outline package style and surface mount capability.

Median Price

$0.349

Lifecycle Status

Suppliers In-Stock

17

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 1,822 parts In-Stock

1+ parts

$0.349

100+ parts

$0.196

1k+ parts

$0.147

10k+ parts

$0.139

1,822

$0.349

$0.196

$0.147

$0.139

Newark

USA . 2,802 parts In-Stock

1+ parts

$0.642

100+ parts

$0.354

1k+ parts

$0.237

10k+ parts

-

2,802

$0.642

$0.354

$0.237

-

Mouser Electronics

USA . 41,028 parts In-Stock

1+ parts

$0.740

100+ parts

$0.295

1k+ parts

$0.202

10k+ parts

-

41,028

$0.740

$0.295

$0.202

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DigiKey

USA . 1,625 parts In-Stock

1+ parts

$0.740

100+ parts

$0.295

1k+ parts

$0.202

10k+ parts

$0.151

1,625

$0.740

$0.295

$0.202

$0.151

Arrow

USA . 114,000 parts In-Stock

1+ parts

-

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$0.120

114,000

-

-

-

$0.120

Verical

USA . 6,000 parts In-Stock

1+ parts

-

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$0.143

6,000

-

-

-

$0.143

Element14

Singapore . 1,822 parts In-Stock

1+ parts

-

100+ parts

$0.343

1k+ parts

$0.273

10k+ parts

-

1,822

-

$0.343

$0.273

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 10 parts In-Stock

1+ parts

$0.190

100+ parts

-

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-

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10

$0.190

-

-

-

TME

Poland . 2,690 parts In-Stock

1+ parts

$0.690

100+ parts

$0.272

1k+ parts

$0.197

10k+ parts

-

2,690

$0.690

$0.272

$0.197

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IBS Electronics

USA . 117,000 parts In-Stock

1+ parts

-

100+ parts

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$0.259

117,000

-

-

-

$0.259

Chip Stock

USA . 96,174 parts In-Stock

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96,174

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Vyrian

USA . 73,885 parts In-Stock

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73,885

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-

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NAC Semi

USA . 21,000 parts In-Stock

1+ parts

-

100+ parts

-

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10k+ parts

$0.373

21,000

-

-

-

$0.373

Prism Electronics

USA . 6,902 parts In-Stock

1+ parts

-

100+ parts

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6,902

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-

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Rutronik

Germany . 6,000 parts In-Stock

1+ parts

-

100+ parts

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10k+ parts

$0.214

6,000

-

-

-

$0.214

ComSIT Distribution GmbH

Germany . 2,075 parts In-Stock

1+ parts

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2,075

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J2 Sourcing AB

Sweden . 10 parts In-Stock

1+ parts

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10

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 33,496 parts In-Stock

1+ parts

$0.103

100+ parts

-

1k+ parts

-

10k+ parts

-

33,496

$0.103

-

-

-

Semicontronic

India . 33,475 parts In-Stock

1+ parts

$0.103

100+ parts

$0.100

1k+ parts

$0.100

10k+ parts

-

33,475

$0.103

$0.100

$0.100

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Corohmni

South Africa . 466 parts In-Stock

1+ parts

$0.190

100+ parts

-

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-

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466

$0.190

-

-

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Argo Parts USA

USA . 591 parts In-Stock

1+ parts

$0.191

100+ parts

-

1k+ parts

-

10k+ parts

$0.185

591

$0.191

-

-

$0.185

Advanced Electronics

New Zealand . 150 parts In-Stock

1+ parts

$0.196

100+ parts

$0.186

1k+ parts

$0.186

10k+ parts

-

150

$0.196

$0.186

$0.186

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Aztec Data Supply Inc.

USA . 373 parts In-Stock

1+ parts

$0.310

100+ parts

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373

$0.310

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Microchip USA

USA . 2,582 parts In-Stock

1+ parts

$1.017

100+ parts

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2,582

$1.017

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Andel Nordic

Denmark . 4,027 parts In-Stock

1+ parts

$10.290

100+ parts

-

1k+ parts

$9.878

10k+ parts

$9.878

4,027

$10.290

-

$9.878

$9.878

GreenTree Electronics

Israel . 78,000 parts In-Stock

1+ parts

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78,000

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RC Electronics

USA . 52,176 parts In-Stock

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52,176

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Lixinc

USA . 18,013 parts In-Stock

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18,013

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

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Robosynatics

Brazil . 9,004 parts In-Stock

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9,004

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Lucentia Tech

USA . 9,004 parts In-Stock

1+ parts

-

100+ parts

$0.186

1k+ parts

$0.182

10k+ parts

$0.182

9,004

-

$0.186

$0.182

$0.182

Glotronic Ltd.

UK . 3,790 parts In-Stock

1+ parts

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3,790

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Component Connect

USA . 3,735 parts In-Stock

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3,735

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Continental Prestige Electronics

USA . 1,988 parts In-Stock

1+ parts

-

100+ parts

$0.235

1k+ parts

$0.154

10k+ parts

$0.139

1,988

-

$0.235

$0.154

$0.139

Overview

Enhance your electronic projects with the DRDNB21D-7 by Diodes Incorporated. As a leading manufacturer, Diodes Incorporated delivers top-quality small signal bipolar junction transistors that are perfect for switching applications. This NPN transistor features a common emitter configuration with 2 elements, a built-in diode, and resistor for added convenience. With a maximum power dissipation of 0.2W and a minimum DC current gain of 80, this transistor ensures reliable performance. Trust Diodes Incorporated to provide innovative solutions that meet your needs and bring value to your projects. Elevate your designs with the DRDNB21D-7 today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the components inside, making the transistor suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, offering versatility in circuit design.

Configuration: COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR

The built-in diode and resistor improve efficiency and reliability in the circuit, reducing the need for additional components.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring optimal performance in tasks such as turning on and off currents.

Surface Mount: YES

Facilitates easy assembly onto circuit boards, saving time and effort during manufacturing processes.

Package Shape: RECTANGULAR

The rectangular shape allows for space-efficient placement on circuit boards, optimizing layout and design.

Maximum Power Dissipation (Abs): 0.2 W

With a high power dissipation rating, this transistor can handle moderate power levels without overheating.

Minimum DC Current Gain (hFE): 80

The high DC current gain ensures stable and predictable transistor behavior, essential for accurate circuit operation.

Maximum Operating Temperature: 150 °C

Capable of operating at high temperatures, enabling use in a wide range of environments and applications.

Maximum Collector-Emitter Voltage: 50 V

The high maximum voltage rating allows for versatility in circuit design, accommodating various voltage requirements.

Transistor Element Material: SILICON

Silicon transistors offer reliable performance and efficiency, making them a popular choice for electronic devices.

Minimum Operating Temperature: -55 °C

Can withstand low temperatures, ensuring functionality in cold environments or during startup conditions.

Maximum Collector Current (IC): 0.1 A

With a moderate collector current rating, this transistor is suitable for low to medium current applications.

Peak Reflow Temperature °C: 260

Capable of withstanding high reflow temperatures during the manufacturing process, ensuring reliable solder connections.

Nominal Transition Frequency (fT): 250 MHz

High transition frequency allows for fast switching speeds and high-frequency performance, ideal for applications requiring rapid signal processing.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) DRDNB21D-7 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

80

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

DRDNB21D-7 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

Category top products 20

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